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Carrier relaxation and recombinationin InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence

机译：时间分辨阴极发光探测的InGaN / GaN量子异质结构中的载流子弛豫和复合

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摘要

Spatially, spectrally, and temporally resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation in InGaN/GaN heterostructure and single quantum well (QW) samples. CL images of the QW sample revealed a spotty cellular pattern indicative of local In compositional fluctuations on a scale of <100 nm. The compositional variations induce local potential fluctuations, resulting in a strong lateral excitonic localization at InN-rich regions in the InGaN QW layer. Time-resolved CL measurements revealed a lateral spatial variation in the luminescence decay time which correlates with the spatial variation in the luminescence efficiency. A reduced lifetime is observed at boundary regions between centers of excitonic localization. A detailed time-resolved CL study shows that carriers generated in the boundary regions will diffuse toward and recombine at the InN-rich centers. An electron beam induced modification of the emission spectra was observed for InGaN/GaN heterostructure samples. Exposure to the e-beam resulted in a shift in the near-band gap emission to higher energies with a simultaneous increase in the emission intensity. These result are interpreted as a modification of the surface passivation through e-beam exposure and carbidization of the surface.
机译：在空间，光谱和时间上解析的阴极发光（CL）技术已用于检查InGaN / GaN异质结构和单量子阱（QW）样品中的载流子弛豫的光学性质和动力学。 QW样品的CL图像显示斑点状细胞模式，表明局部In组成波动<100 nm。成分变化会引起局部电势波动，从而导致InGaN QW层中富InN的区域发生强烈的横向激子定位。时间分辨的CL测量显示了发光衰减时间的横向空间变化，其与发光效率的空间变化相关。在激子定位中心之间的边界区域观察到寿命缩短。一项详细的时间分辨CL研究表明，在边界区域生成的载流子将向InN富集中心扩散并在其中富集。对于InGaN / GaN异质结构样品，观察到电子束引起的发射光谱修饰。暴露于电子束会导致近带隙发射向更高能量的转变，同时发射强度也会增加。这些结果被解释为通过电子束暴露和表面碳化而对表面钝化的修饰。

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