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Preliminary characterization of a new hybrid structure with CdTe: x-ray imaging capabilities

机译：具有CdTe的新型混合结构的初步表征：x射线成像功能

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Abstract: This paper presents a new structure of a 2-D imaging system devoted to radiology. The detection upper medium, made with bulk cadmium telluride, is connected to the electronic 2D readout circuit through indium bumps. The 60 $MUL 60 $mu@m$+2$/ electrodes, 100 $mu@m pitch, are made on the CdTe:Cl detector with standard lithography and ion etching techniques. The silicon circuit is made of n $MUL n independent integrated amplifiers with serial multiplexing readout. The feasibility of such arrangement is made with 64 $MUL 64 pixels. The thickness of 900 $mu@m is well suited for 100 keV x rays. Characterization is performed with 10 ms x-ray pulses. Due to electric field the charges are well channelled and high spatial resolution is available in addition with a very high absorption efficiency. The direct absorption of x ray in the readout circuit is negligible. It does not affect either the signal to noise ratio, or the lifetime of the silicon low level analogue ASIC. The presentation includes linearity, sensitivity, noise FTM, and dynamic image discussion. !8
机译：摘要：本文提出了专门用于放射学的二维成像系统的新结构。用块状碲化镉制成的检测上层介质通过铟凸点连接到电子2D读出电路。用标准光刻和离子刻蚀技术在CdTe：Cl检测器上制作60个电极，每个电极的节距为100μm，节距为60μm@ m $ + 2 $ + 2 $。硅电路由n个MUL n个独立的集成放大器组成，具有串行多路复用读出。用64 $ MUL 64像素进行这种布置的可行性。 900μm@ m的厚度非常适合100 keV x射线。用10 ms的X射线脉冲进行表征。由于电场的作用，电荷被很好地引导，并且除了具有非常高的吸收效率之外，还可以获得高空间分辨率。读出电路中x射线的直接吸收可以忽略不计。它既不影响信噪比，也不影响硅低电平模拟ASIC的寿命。演示包括线性，灵敏度，噪声FTM和动态图像讨论。 ！8

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