首页> 中文学位 >Vapor Phase Growth of in-Plane Directional Semiconductor Nanowires and Their Optoelectronics Applications
【6h】

Vapor Phase Growth of in-Plane Directional Semiconductor Nanowires and Their Optoelectronics Applications

代理获取

目录

第一个书签之前

HUNAN UNIVERSITY DECLARATION

Copyright Statement

DEDICATION

ABSTRACT

摘 要

TABLE OF CONTENTS

LIST OF Figures

LIST OF TABLES

Chapter 1 Introduction

1.1 Background

1.1.1 Nanotechnology

1.1.2 Semiconductor Nanowires

1.1.3 Guided Nanowires

1.2 Optical Applications

1.3 Optoelectronic Applications

1.4 Vapor-Liquid-Solid Mechanism

1.5 Epitaxial Growth of Semiconductor Nanowire Arrays

1.6 Graphoepitaxial Growth of Semiconductor Nanowire Arrays

1.7 Thesis Structure

Chapter 2 Directional Growth of Ultra-long CsPbX3 Perovskite NWs for High Performance Photodetectors (PDs)

2.1 Introduction

2.2 Graphoepitaxial Growth Process for CsPbBr3 NWs

2.3 Experimental Section

2.4 Microstructure Characterizations

2.4.1 SEM Characterization for Ultra-long CsPbBr3 NWs

2.4.2 XRD and TEM Results

2.4.3 Diameter Controlled CsPbBr3 NWs

2.5 Optical Characterizations for the Ultra-long CsPbX3 (X=Br, I) NWs

2.5.1 Optical Emission Behavior for CsPbBr3 NWs

2.5.2 Waveguide Emission for CsPbI3 NWs

2.6 Photoelectronic Properties

2.6.1 CsPbBr3 Photodetector Characteristics

2.6.2 CsPbI3 Photodetector Characterization

2.7 Conclusion

Chapter 3 High-Quality In-Plane Aligned CsPbX3 Perovskite NW Lasers with Composition Dependent Strong Exciton-Photon Coupling

3.1 Introduction

3.2 Synthesize of the In-plane CsPbX3 Directional NWs

3.3 Structural Characterizations of CsPbX3 NWs

3.4 Lasing Behavior for CsPbX3 NWs

3.5 Guided Growth for the CspbBr3 NWs on C-Plane Sapphire

3.6 Lasing Action of CsPbI3 Directional NWs

3.7 CsPbX3 NW Arrays and Lasing Study

3.8 Lasing Modes and the Light-Matter Interaction in CsPbX3 NWs

3.9 Rabi Splitting Energy for CsPbX3 NWs

3.10 Conclusion

Chapter 4 Controllable Vapor Growth of Large Area Aligned CdSxSe1-x NWs

4.1 Introduction

4.2 Experimental Section

4.2.1 Synthesis of Directional NWs

4.2.2 Microstructure Characterizations

4.2.3 Optical Characterization

4.3 Implementation of CdSxSe1-x Directional NW based Photodetectors

4.4 Conclusion

Chapter 5 Vapor Phase Growth of Tin doped CdS Directional Nanowires for Photodetectors

5.1 Introduction

5.2 Experimental Section

5.2.1 Synthesis of Tin Doped CdS NWs

5.2.2 Growth Mechanism

5.2.3 Surface Characterizations

5.3 Guided Growth of Tin Doped CdS NWs on Un-annealed M-Plane Substrate

5.4 Guided Growth of Tin Doped CdS NWs on Well Cut C-Plane Substrate

5.5 Optical Characterizations of Tin Doped CdS NWs

5.6 Photoelectric Characterizations of Tin Doped CdS Photodetector

5.7 Conclusion

Chapter 6 Conclusions and Outlook

References

List of Publications

Acknowledgements

Muhammad Shoaib

展开▼

著录项

  • 作者

    MUHAMMAD SHOAIB;

  • 作者单位

    湖南大学;

  • 授予单位 湖南大学;
  • 学科 物理学
  • 授予学位 博士
  • 导师姓名 潘安练;
  • 年度 2018
  • 页码
  • 总页数
  • 原文格式 PDF
  • 正文语种 中文
  • 中图分类
  • 关键词

    AND;

相似文献

  • 中文文献
  • 外文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号