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Bulk silicon-germanium heterojunction bipolar transistor process feature implications for single-event effects analysis and charge collection mechanisms.

机译：块状硅锗异质结双极晶体管工艺的特征在于单事件效应分析和电荷收集机制。

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Abstract not available.

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作者
Pellish, Jonathan Allen.;
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作者单位

Vanderbilt University.;

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授予单位 Vanderbilt University.;
学科 Engineering Electronics and Electrical.;Physics Radiation.
学位 Ph.D.
年度 2008
页码 129 p.
总页数 129
原文格式 PDF
正文语种 eng
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专利

1. TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS [J] . John D. Cressler International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第2期

机译：硅锗异键结双极晶体管的总剂量和单事件效应
2. TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS [J] . JOHN D. CRESSLER International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第2期

机译：硅锗异键结双极晶体管的总剂量和单事件效应
3. A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor [J] . Sun Ya-Bin, Fu Jun, Xu Jun, 中国物理：英文版 . 2013,第005期

机译：硅锗异质结双极晶体管中脉冲激光诱导的单事件瞬态
4. Numerical simulation of Silicon-Germanium Heterojunction Bipolar Transistor (HBT) in silvaco/atlas and analysis of HBT base transit time to achieve faster operation [C] . Saha Upoma, Imteaz Fahmi, Saleque Oishi Prova, International Conference on Electrical Engineering and Information Communication Technology . 2015

机译：Silvaco / Atlas中的硅锗异质结双极晶体管（HBT）的数值模拟以及对HBT基极传输时间的分析以实现更快的操作
5. Geometrical scaling and radiation effects in silicon-germanium heterojunction bipolar transistors. [D] . Zhang, Shiming. 2002

机译：硅锗异质结双极晶体管中的几何缩放和辐射效应。
6. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor [O] . Curry, M. J., England, T. D., Bishop, N. C., 2015

机译：使用a的单电子晶体管的低温预放大硅锗异质结双极晶体管

Bulk silicon-germanium heterojunction bipolar transistor process feature implications for single-event effects analysis and charge collection mechanisms.

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