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CMOS VCO and LNA implemented by air-suspended on-chip RF MEMS inductors.

机译：CMOS VCO和LNA由空气悬浮的片上RF MEMS电感器实现。

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In this thesis, a CMOS 2.4 GHz Low noise amplifier (LNA) and Voltage-controlled oscillator (VCO) was designed and simulated. These circuits were designed to operate in the 2.4GHz Industrial Scientific Medicine (ISM) band and to achieve Bluetooth and Wifi standard specifications. High-Q RF MEMS air-suspended circular spiral inductors are used in both circuits. High-Q inductors give the circuit better performance parameters including higher gain, lower noise figure and narrower bandwidth. The integration of these RF MEMS inductors onto RF circuit chips was carried out using the UV-LIGA technique and an additive pattern transfer technique such as electroplating. The LNA maintains a gain of 10dB and noise figure of 0.8dB at 2.4 GHz. With an input reflection coefficient of -10.8dB and output reflection coefficient of -12.93dB, the LNA matches successfully with 50O load at 2.4 GHz. The VCO maintains an average output swing of 1.95V in a frequency range of 2.94GHz to 2.2GHz achieving a 740GHz of tuning range.

机译：本文设计并仿真了CMOS 2.4 GHz低噪声放大器（LNA）和压控振荡器（VCO）。这些电路设计为在2.4GHz工业科学医学（ISM）频段工作，并达到蓝牙和Wifi标准规范。两种电路均使用高Q RF MEMS空气悬浮圆形螺旋电感器。高Q电感器可为电路提供更好的性能参数，包括更高的增益，更低的噪声系数和更窄的带宽。将这些RF MEMS电感器集成到RF电路芯片上是使用UV-LIGA技术和附加图案转移技术（例如电镀）进行的。 LNA在2.4 GHz时保持10dB的增益和0.8dB的噪声系数。 LNA具有-10.8dB的输入反射系数和-12.93dB的输出反射系数，可在2.4 GHz的50O负载下成功匹配。 VCO在2.94GHz至2.2GHz的频率范围内保持1.95V的平均输出摆幅，从而实现740GHz的调谐范围。

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作者
Shenoy, Varun K.;
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作者单位

The University of Texas at Arlington.$bElectrical Engineering.;

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授予单位 The University of Texas at Arlington.$bElectrical Engineering.;
学科 Engineering Electronics and Electrical.
学位 M.S.
年度 2007
页码 90 p.
总页数 90
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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专利

1. Ultra-wideband Quadrature LC-VCO using Capacitor-Bank and backgate topology with on-chip spirally stacked inductor in 0.13 μm RF-CMOS process covering S-C bands [J] . Balodi Deepak, Verma Arunima, Paravastu Ananta Govindacharyulu Microelectronics journal . 2020,第May期

机译：超宽带正交LC-VCO使用电容器 - 组和带有片上螺旋堆叠电感的电容器拓扑，在0.13μm的RF-CMOS工艺中覆盖S-C带
2. A 1.2-V RF Front-End With On-Chip VCO for PCS 1900 Direct Conversion Receiver in 0.13-μm CMOS [J] . Pete Sivonen, Jussi Tervaluoto, Niko Mikkola, IEEE Journal of Solid-State Circuits . 2006,第2期

机译：具有片上VCO的1.2V RF前端，用于0.13μmCMOS的PCS 1900直接转换接收器
3. A Fully Integrated CMOS RF Front-End with On-Chip VCO for W-CDMA Applications [J] . Hyung Ki AHN, Kyoohyun LIM, Chan-Hong PARK, IEICE Transactions on Electronics . 2004,第6期

机译：具有片上VCO的全集成CMOS RF前端，适用于W-CDMA应用
4. Phase noise performance comparison between Liga-MEMS and on-chip CMOS capacitors for a VCO application [C] . Fang L., Klymyshyn D., Dinh A., Electrical and Computer Engineering, 2005. Canadian Conference on . 2005

机译：用于VCO的Liga-MEMS和片上CMOS电容器之间的相位噪声性能比较
5. Integrated CMOS transmit-receive switch using on-chip spiral inductors. [D] . Talwalkar, Niranjan. 2004

机译：使用片上螺旋电感器的集成CMOS收发开关。
6. A VCO-Based CMOS Readout Circuit for Capacitive MEMS Microphones [O] . Andres Quintero, Fernando Cardes, Carlos Perez, 2019

机译：基于VCO的电容MEMS麦克风的CMOS读出电路
7. PHASE NOISE PERFORMANCE COMPARISON BETWEEN LIGA-MEMS AND ON-CHIP CMOS CAPACITORS FOR A VCO APPLICATION [O] . Leonard Fang, David Klymyshyn, Anh Dinh, 2015

机译：用于VCO应用的LIGa-mEms和片上CmOs电容器之间的相位噪声性能比较

CMOS VCO and LNA implemented by air-suspended on-chip RF MEMS inductors.

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