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Development of novel prototype scalable magnetoresistive random access memory.

机译：新型原型可扩展磁阻随机存取存储器的开发。

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摘要

MRAM has received a great deal of attention in recent years for its potential to become a universal memory capable of nonvolatility, infinite cycleability, fast switching speeds, high density, and low cost. However, the limitations of conventional design architectures have made MRAM difficult to realize. In this work, a new annular current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) design architecture is presented to achieve robust single-step switching, reasonably low switching currents, and good thermal stability. Four scalable pseudo spin valve annular designs are examined, including three repeats of a CoFe/Cu/NiFe tri-layer stack, single-repeat CoFe/Cu/CoFe top and bottom spin valves with Cu laminations in both the reference and storage layer for enhanced GMR, and a single-repeat NiFe/CoFe/Cu/CoFe bottom spin valve tri-layer stack with Cu laminations in the reference layer only. Each sputter deposited film stack is fabricated into a 600 nm outer diameter, 200 nm inner diameter ring and test structure using a combination of electron beam lithography, optical lithography, ion milling, reactive ion etching, and chemical mechanical planarization. The ensuing current induced magnetic switching properties are obtained from the major and minor hysteresis loops measured for each design. The results demonstrate multiple-step switching in the CoFe/Cu/NiFe three-repeat tri-layer and CoFe/Cu/CoFe top spin valve rings. Conversely, the CoFe/Cu/CoFe bottom spin valve and NiFe/CoFe/Cu/CoFe rings demonstrate clean, robust, single-step magnetic switching, with significant spin transfer torque observed in the NiFe/CoFe storage layer of the latter design. Following a field induced initialization process, a robust trapped domain wall pair switching mode is observed in the NiFe/CoFe/Cu/CoFe rings, demonstrating that low power is attainable.
机译：近年来，MRAM因其成为具有非易失性，无限循环性，快速切换速度，高密度和低成本的通用存储器而备受关注。但是，传统设计架构的局限性使得MRAM难以实现。在这项工作中，提出了一种新的环形电流垂直于平面（CPP）的巨磁阻（GMR）设计架构，以实现鲁棒的单步开关，合理的低开关电流和良好的热稳定性。检查了四个可扩展的伪自旋阀环形设计，包括三个重复的CoFe / Cu / NiFe三层堆栈，单重复CoFe / Cu / CoFe顶部和底部自旋阀，在参考层和存储层均具有Cu叠层，以增强性能GMR和单重复NiFe / CoFe / Cu / CoFe底部自旋阀三层堆栈，仅在参考层中具有Cu叠层。使用电子束光刻，光学光刻，离子铣削，反应离子刻蚀和化学机械平面化的组合，将每个溅射沉积的膜叠层制成外径为600 nm，内径为200 nm的环和测试结构。随之产生的电流感应的磁开关特性是从针对每种设计测量的主要和次要磁滞回线获得的。结果表明，在CoFe / Cu / NiFe三重三层和CoFe / Cu / CoFe顶部自旋阀环中进行了多步切换。相反，CoFe / Cu / CoFe底部自旋阀和NiFe / CoFe / Cu / CoFe环表现出清洁，坚固，一步式的磁性切换，在后一种设计的NiFe / CoFe存储层中观察到显着的自旋传递扭矩。在磁场诱导的初始化过程之后，在NiFe / CoFe / Cu / CoFe环中观察到了鲁棒的俘获畴壁对切换模式，这表明可以获得低功率。

著录项

  • 作者

    Moneck, Matthew Thomas.;

  • 作者单位

    Carnegie Mellon University.;

  • 授予单位 Carnegie Mellon University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2008
  • 页码 306 p.
  • 总页数 306
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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