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Schrodinger Equation Monte Carlo in three dimensions for simulation of nanoscale MOSFETs.

机译：三维Schrodinger方程Monte Carlo模拟纳米MOSFET。

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A new quantum transport simulator---Schrodinger Equation Monte Carlo in Three Dimensions (SEMC-3D)---has been developed for simulating the carrier transport in nanoscale 3D MOSFET geometries. SEMC-3D self-consistently solves: (1) the 1D quantum transport equations derived from the SEMC method with open boundary conditions and rigorous treatment of various scattering processes including phonon and surface roughness scattering, (2) the 2D Schrodinger equations of the device cross sections with close boundary conditions to obtain the spatially varying subband structure along the conduction channel, and (3) the 3D Poisson equation of the whole device. Therefore, SEMC-3D can provide a physically accurate and electrostatically self-consistent approach to the quantum transport in the subbands of 3D nanoscale MOSFETs. SEMC-3D has been used to simulate Si nanowire (NW) nMOSFETs to both demonstrate the capabilities of SEMC-3D, itself, and to provide new insight into transport phenomena in nanoscale MOSFETs, particularly with regards to interplay among scattering, quantum confinement and transport, and strain.

机译：为了模拟纳米级3D MOSFET几何结构中的载流子传输，已经开发了一种新的量子传输模拟器-三维Schrodinger方程蒙特卡洛（SEMC-3D）。 SEMC-3D自洽地求解：（1）从SEMC方法导出的一维量子传输方程式具有开放边界条件，并严格处理了各种散射过程，包括声子和表面粗糙度散射；（2）器件交叉的二维Schrodinger方程具有接近边界条件的截面，以获得沿传导通道的空间变化的子带结构，以及（3）整个器件的3D泊松方程。因此，SEMC-3D可以为3D纳米级MOSFET子带中的量子传输提供物理上准确且静电自洽的方法。 SEMC-3D已用于模拟Si纳米线（NW）nMOSFET，以展示SEMC-3D本身的功能，并提供对纳米MOSFET中传输现象的新见解，特别是在散射，量子约束和传输之间的相互作用方面和应变。

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作者
Liu, Keng-Ming.;
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作者单位

The University of Texas at Austin.;

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授予单位 The University of Texas at Austin.;
学科 Engineering Electronics and Electrical.
学位 Ph.D.
年度 2008
页码 91 p.
总页数 91
原文格式 PDF
正文语种 eng
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1. Schroedinger equation Monte Carlo in three dimensions for simulation of carrier transport in three-dimensional nanoscale metal oxide semiconductor field-effect transistors [J] . Keng-Ming Liu, Wanqiang Chen, Leonard F. Register, Journal of Applied Physics . 2008,第11期

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3. Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs [J] . Lindberg J., Aldegunde M., Nagy D., IEEE Transactions on Electron Devices . 2014,第2期

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4. Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors [C] . Elmessary Muhammad A., Nagy Daniel, Aldegunde Manuel, International Workshop on Computational Electronics . 2015

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5. Two-dimensional Monte Carlo particle-based simulations of ultra-small MOSFETs. [D] . He, Xiaojiang. 2000

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Schrodinger Equation Monte Carlo in three dimensions for simulation of nanoscale MOSFETs.

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