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首页> 外文学位 >Study of carrier injection for performance optimization of a reconfigurable waveguide digital optical switch on indium gallium arsenic phosphide/indium phosphide.
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Study of carrier injection for performance optimization of a reconfigurable waveguide digital optical switch on indium gallium arsenic phosphide/indium phosphide.

机译：载流子注入的研究，以优化磷化砷化镓砷/磷化铟上可重构波导数字光开关的性能。

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摘要

This thesis presents experimental data on the optical performance of InGaAsP/InP active devices, including digital optical switches (DOSs) and bend-loss modulators, actuated by carrier injection as well as the electro-optical effect. It is demonstrated that carrier injection is a viable mechanism for optical switching in InGaAsP material, providing polarization and wavelength independent operation at response speeds on the order of nanoseconds.; Two mask layouts and several wafer layer structures were designed to study carrier injection and optimize performance of DOS devices. Using Mach-Zehnder and Fabry-Perot interferometer test structures, the relationship between refractive index modification and applied current density was characterized. It was determined that carrier lifetime and material bandgap play vital roles in determining switching contrast, switching speed, propagation loss, and driving power. The primary conclusion is that the switching speed is limited by Shockley-Reed-Hall carrier recombination times, and that increasing defect density reduces switching times at the expense of increasing required switching current. Alternatively, switching times may be reduced through over-driving. The dependence of refractive index modification on InGaAsP alloy was also studied, with the conclusion that a smaller bandgap material provides larger index changes at smaller current densities, with minimal detriment from absorption losses.; Several variations of the DOS device design were investigated, including devices with different waveguide width, branching angle, electrode shape, method of electrical isolation, and InGaAsP/InP heterostructure composition and doping. The optimized DOS devices demonstrated broadband operation, better than 25 dB contrast, less than 10 kA/cm2 switching current density, and an optical response time of less than 3 ns. Additionally, faster response was achieved by electro-optical actuation. This DOS design is a promising device for optical router configurations. They have been successfully cascaded in a crosspoint configuration to construct a 2x2 switch.; A bend loss attenuator actuated by carrier injection was also demonstrated, with significant improvements in performance over a straight waveguide attenuator. The device exhibits better than 15 dB modulation and 20 nanoseconds response time. The attenuator design is compact and can replace existing connection waveguides in a photonic integrated circuit, allowing it to be easily integrated.
机译：本文介绍了由载流子注入和电光效应驱动的InGaAsP / InP有源器件的光学性能的实验数据，包括数字光开关（DOS）和弯曲损耗调制器。事实证明，载流子注入是InGaAsP材料中光交换的可行机制，它以响应速度为纳秒级提供偏振和波长无关的操作。设计了两个掩模布局和几个晶圆层结构，以研究载流子注入并优化DOS器件的性能。使用Mach-Zehnder和Fabry-Perot干涉仪测试结构，表征了折射率变化与施加电流密度之间的关系。已经确定，载流子寿命和材料带隙在确定开关对比度，开关速度，传播损耗和驱动功率方面起着至关重要的作用。主要结论是，开关速度受到肖克利-里德-霍尔载波复合时间的限制，并且缺陷密度的增加会减少开关时间，但会增加所需的开关电流。可替代地，可以通过过驱动来减少切换时间。还研究了折射率变化对InGaAsP合金的依赖性，得出的结论是，较小的带隙材料在较小的电流密度下可提供较大的折射率变化，而对吸收损耗的损害最小。研究了DOS器件设计的几种变体，包括具有不同波导宽度，分支角，电极形状，电隔离方法以及InGaAsP / InP异质结构组成和掺杂的器件。经过优化的DOS器件显示出宽带操作，优于25 dB的对比度，小于10 kA / cm2的开关电流密度以及小于3 ns的光学响应时间。另外，通过电光致动可以实现更快的响应。 DOS设计是用于光路由器配置的有前途的设备。它们已经成功地以交叉点配置进行级联，以构建2x2交换机。还证明了通过载流子注入驱动的弯曲损耗衰减器，与直线波导衰减器相比，其性能有了显着提高。该器件具有优于15 dB的调制能力和小于20纳秒的响应时间。衰减器设计紧凑，可以代替光子集成电路中现有的连接波导，从而使其易于集成。

著录项

  • 作者

    Ng, Sandy.;

  • 作者单位

    Carleton University (Canada).;

  • 授予单位 Carleton University (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 137 p.
  • 总页数 137
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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