Fabrication of Bragg gratings using interferometric lithography.

机译：使用干涉光刻技术制作布拉格光栅。

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A setup has been designed and realized for the fabrication of Bragg Gratings in edge emitting semiconductor laser. In this setup a HeCd laser (lambda=325nm) is used in a Lloyd's mirror configuration, to interferometrically expose a sinusoidal grating on photoresist. The dilution of photo-resistant (PR) material allows for a spincoat thickness of 50nm which is needed to minimize standing waves in the photo-resist that lead to a nonuniform exposure. Variations of exposure time show the progression of photo-resist gratings. Etching recipes using both dry and wet etching techniques were successfully used to transfer the grating pattern into semiconductor material. Bragg Gratings with Λ=250nm in InP and InGaAs have been characterized with an Atomic Force Microscope to have a grating height of over 100nm.

机译：已经设计并实现了用于在边缘发射半导体激光器中制造布拉格光栅的装置。在此设置中，HeCd激光器（λ= 325nm）用于劳埃德的反射镜配置，以干涉方式在光致抗蚀剂上曝光正弦光栅。稀释光阻（PR）材料可实现50nm的旋涂厚度，这是使光致抗蚀剂中导致不均匀曝光的驻波最小化所必需的。曝光时间的变化表明了光刻胶光栅的发展。使用干法和湿法蚀刻技术的蚀刻配方已成功用于将光栅图案转移到半导体材料中。 InP和InGaAs中Λ= 250nm的布拉格光栅已经用原子力显微镜表征，具有超过100nm的光栅高度。

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作者
Pizarro, Ricardo Andres.;
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作者单位

University of Maryland, College Park.$bElectrical Engineering.;

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授予单位 University of Maryland, College Park.$bElectrical Engineering.;
学科 Engineering Electronics and Electrical.
学位 M.S.
年度 2007
页码 94 p.
总页数 94
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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Fabrication of Bragg gratings using interferometric lithography.

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