• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Development of monolithic silicon-germanium and packages RF MEMS high-linearity five-bit high-low pass phase shifters for SOC X-band T/R modules.
【24h】

Development of monolithic silicon-germanium and packages RF MEMS high-linearity five-bit high-low pass phase shifters for SOC X-band T/R modules.

机译：开发单片硅锗，并封装用于SOC X波段T / R模块的RF MEMS高线性度五位高低通移相器。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A comprehensive study of the High-pass/Low-pass topology has been performed, increasing the understanding of error sources arising from bit layout issues and fabrication tolerances. This included a detailed analysis of error sources in monolithic microwave phase shifters due to device size limitations, inductor parasitics, loading effects, and non-ideal switches. Each component utilized in the implementation of a monolithic high-low pass phase shifter was analyzed, with its influence on phase behavior shown in detail. An emphasis was placed on the net impact on absolute phase variation, which is critical to the system performance of a phased array radar system. The design of the individual phase shifter filter sections, and the influence of bit ordering on overall performance was also addressed.; A variety of X-band four- and five-bit phase shifters were fabricated in a 200 GHz SiGe HBT BiCMOS technology platform, and further served to validate the analysis and design methodology. The SiGe phase shifter can be successfully incorporated into a single-chip T/R module forming a system-on-a-chip (SoC).; Reduction in the physical size of transmission lines was shown to be a possibility with spinel magnetic nanoparticle films. The signal transmission properties of phase lines treated with nanoparticle thin films were examined, showing the potential for significant size reduction in both delay line and High-pass/Low-pass phase topologies.; Wide-band, low-loss, and near-hermetic packaging techniques for RF MEMS devices were presented. A thermal compression bonding technique compatible with standard IC fabrication techniques was shown, that uses a low temperature thermal compression bonding method that avoids plastic deformations of the MEMS membrane.; Ultimately, a system-on-a-package (SoP) approach was demonstrated that utilized packaged RF MEMS switches to maintain the performance of the SiGe phase shifter with much lower loss. The extremely competitive performance of the MEMS-based High-pass/Low-pass phase shifter, despite the lack of the extensive toolkits and commercial fabrication facilities employed with the active-based SiGe phase shifters, confirms both the effectiveness of the detailed phase error analysis presented in this work and the robust nature of the High-pass/Low-pass topology.
机译：已经对高通/低通拓扑进行了全面研究，从而增加了对由于位布局问题和制造公差而引起的错误源的理解。其中包括由于器件尺寸限制，电感器寄生效应，负载效应和非理想开关而导致的单片微波移相器误差源的详细分析。分析了单片高低通移相器实现中使用的每个组件，并详细显示了其对相行为的影响。重点放在对绝对相位变化的净影响上，这对相控阵雷达系统的系统性能至关重要。还解决了单个移相器滤波器部分的设计以及位排序对整体性能的影响。在200 GHz SiGe HBT BiCMOS技术平台上制造了各种X波段四位和五位移相器，并进一步用于验证分析和设计方法。 SiGe相移器可以成功地集成到单芯片T / R模块中，从而形成片上系统（SoC）。尖晶石磁性纳米颗粒薄膜有可能减小传输线的物理尺寸。检查了用纳米颗粒薄膜处理的相线的信号传输特性，显示出在延迟线和高通/低通相位拓扑中尺寸显着减小的潜力。提出了用于RF MEMS器件的宽带，低损耗和近乎密封的封装技术。示出了与标准IC制造技术兼容的热压键合技术，其使用了避免了MEMS膜的塑性变形的低温热压键合方法。最终，展示了一种系统级封装（SoP）方法，该方法利用封装的RF MEMS开关保持SiGe移相器的性能，而损耗却低得多。尽管缺乏基于有源SiGe移相器的广泛工具套件和商业制造设施，但基于MEMS的高通/低通移相器的极具竞争力的性能证实了详细的相位误差分析的有效性本文中介绍的内容以及高通/低通拓扑的鲁棒性。

著录项

  • 作者

    Morton, Matthew A.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2007
  • 页码 131 p.
  • 总页数 131
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号