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Improving the stability of amorphous silicon solar cells by chemical annealing.

机译:通过化学退火提高非晶硅太阳能电池的稳定性。

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Amorphous silicon solar cells have been extensively studied. However, it is found that the properties of a-Si:H solar cells degrade upon light illumination, and this limits their application. Recently, it has been shown that this instability is correlated with the presence of SiH2 bonds, and a technique, namely chemical annealing, was suggested to improve the stability of a-Si:H. Although a number of results have been reported, no chemical annealed devices with good quality were reported.; In this work, chemical annealing technique was studied to improve the stability of a-Si:H solar cells. It is found that when the annealing was done in hydrogen plasma, the films remained amorphous; in contrast, when in helium plasma, and the annealing time is equal or more than 20 seconds, the films became crystalline. These unusual results show that it is not necessary to have a high hydrogen dilution to obtain nanocrystalline films, and contradict the generally accepted assumption that high hydrogen dilutions are needed to crystallize the amorphous films based on the reactive etching of H ions. Instead, it might be the case that not only the reactive etching effect from the H ions, but also the ion bombardment play a role in crystallizing the amorphous films.
机译:非晶硅太阳能电池已被广泛研究。但是,发现a-Si:H太阳能电池的性质在光照下会降低,这限制了它们的应用。最近,已经表明这种不稳定性与SiH 2键的存在有关,并且提出了一种技术,即化学退火,以改善a-Si:H的稳定性。尽管已经报道了许多结果,但是没有报道高质量的化学退火设备。在这项工作中,研究了化学退火技术以提高a-Si:H太阳能电池的稳定性。发现当在氢等离子体中进行退火时,膜保持无定形。相反,当在氦气等离子体中且退火时间等于或大于20秒时,薄膜便会结晶。这些不寻常的结果表明,不必为了获得纳米晶膜而具有高的氢稀释度,并且与公认的基于氢离子的反应蚀刻需要高的氢稀释度来使非晶膜结晶化的假设相矛盾。相反,可能是这样的情况,不仅来自H离子的反应刻蚀效果,而且离子轰击在使非晶膜结晶中也起作用。

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