首页> 外文学位 >Design of a dual band gallium nitride PA utilizing dual band impedance transformers.
【24h】

Design of a dual band gallium nitride PA utilizing dual band impedance transformers.

机译:利用双频阻抗变换器设计双频氮化镓PA。

获取原文
获取原文并翻译 | 示例

摘要

This thesis discusses the design, fabrication, and testing of a high efficiency, dual band radio frequency power amplifier. While it is difficult to demonstrate an exact mode of operation for power amplifiers at radio frequencies, based on the characteristics of the transistor itself, the argument can be made that our high efficiency performance is due to an approximation to class E operation. The PA is designed around a CGH40025 transistor manufactured by Cree, Inc, which has developed a very useful nonlinear model of its transistor, which allows use of software load/source pull methods to determine optimum impedances to be presented to the gate and drain (hereafter referred to as source and load) of the transistor at each band of operation. A recent work on dual-band impedance matching is then used to design distributed element networks in order to present conjugate matches of these impedances to the transistor. This is followed by a careful layout, after which the PA is then fabricated on a low-impedance substrate using a LPKF Protomat S63 rapid prototyping machine. Measurements of gain and drain current provide values for power-added-efficiency. Simulated gains were 21 and 18 dB at 800 MHz and 1.85 GHz, respectively, with PAE around 63% for both bands. Measurements taken from the fabricated PA showed gains of 20 and 16 dB at each band, but PAE of 80% at 800 MHz and 43% at 1.85 GHz.
机译:本文讨论了一种高效,双频带射频功率放大器的设计,制造和测试。虽然很难证明功率放大器在射频下的确切工作模式,但基于晶体管本身的特性,可以说我们的高效率性能是由于近似于E类工作。该功率放大器是围绕Cree,Inc.制造的CGH40025晶体管设计的,该晶体管已开发出非常有用的晶体管非线性模型,该模型允许使用软件负载/源极拉动方法来确定要呈现给栅极和漏极的最佳阻抗(此后称为“阻抗”)。在每个工作频带中晶体管的源极和负载)。然后,关于双频带阻抗匹配的最新工作被用于设计分布式元件网络,以便将这些阻抗的共轭匹配呈现给晶体管。然后进行仔细的布局,然后使用LPKF Protomat S63快速原型制作机在低阻抗基板上制造PA。增益和漏极电流的测量提供了功率附加效率的值。在800 MHz和1.85 GHz处,模拟增益分别为21 dB和18 dB,两个频带的PAE约为63%。从制造的功率放大器获得的测量结果显示,每个频带的增益分别为20和16 dB,但800 MHz时的PAE为80%,1.85 GHz时的PAE为43%。

著录项

  • 作者

    Poe, David R.;

  • 作者单位

    University of North Texas.;

  • 授予单位 University of North Texas.;
  • 学科 Electrical engineering.
  • 学位 M.S.
  • 年度 2013
  • 页码 35 p.
  • 总页数 35
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号