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Understanding organic thin film properties for microelectronic organic field-effect transistors and solar cells.

机译：了解微电子有机场效应晶体管和太阳能电池的有机薄膜特性。

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摘要

The objective of this work was to understand how the thin film characteristics of p-type organic and polymer semiconductors affect their electronic properties in microelectronic applications. To achieve this goal, three main objectives were drawn out: (1) to create single-crystal organic field-effect transistors and measure the intrinsic charge carrier mobility, (2) to develop a platform for measuring and depositing polymer thin films for organic field-effect transistors, and (3) to deposit polythiophene thin films for inorganic-organic hybrid solar cells and determine how thin film properties effect device performance.; Pentacene single-crystal field-effect transistors (OFETs) were successfully manufactured on crystals grown via horizontal vapor-phase reactors designed for simultaneous ultrapurification and crystal growth. These OFETs led to calculated pentacene field-effect mobility of 2.2 cm2/Vs. During the sublimation of pentacene at atmospheric pressure, a pentacene disporportionation reaction was observed whereby pentacene reacted with itself to form a peripentacene, a 2:1 cocrystal of pentacene:6,13-dihydropentacene and 6,13-dihydropentacene. This has led to the proposal of a possible mechanism for the observed disproportionation reaction similar to other polyaromatic hydrocarbons, which may be a precursor for explaining the formation of graphite.; Several silicon-based and PET-based field-effect transistor platforms were developed for the measurement of mobility of materials in the thin film state. These platforms were critically examined against one another and the single-crystal devices in order to determine the optimal device design for highest possible mobility data, both theoretically based on silicon technology and commercially based on individual devices on flexible substrates. Novel FET device designs were constructed with a single gate per device on silicon and PET as well as the commonly used common-gate device. It was found that the deplanarization effects and poor gate insulator quality of the individual gate devices led to lower overall performance when compared to the common gate approach; however, good transistor behavior was observed with field modulation.; Additionally, these thin films were implemented into inorganic-organic hybrid and purely organic solid-state photovoltaic cells. A correlation was drawn between the thin film properties of the device materials and the overall performance of the device. It was determined that each subsequent layer deposited on the device led to a planarization effect, and that the more pristine the individual layer, the better device performance. The hybrid cells performed at VOC = 0.8V and JSC = 55muA/cm 2.
机译：这项工作的目的是了解p型有机和聚合物半导体的薄膜特性如何影响其在微电子应用中的电子性能。为了实现这一目标，提出了三个主要目标：（1）创建单晶有机场效应晶体管并测量固有的载流子迁移率，（2）开发用于测量和沉积有机薄膜的聚合物薄膜的平台-效应晶体管，和（3）沉积用于无机-有机混合太阳能电池的聚噻吩薄膜，并确定薄膜性能如何影响器件性能。并五苯单晶场效应晶体管（OFET）在通过水平气相反应器生长的晶体上成功制造，该水平反应器设计用于同时进行超纯化和晶体生长。这些OFET导致并五苯的场效应迁移率计算为2.2 cm2 / Vs。在大气压下并五苯的升华过程中，观察到并五苯的歧化反应，从而并五苯与自身反应形成过并五苯，并五苯的2∶1共晶体：6，13-二氢并五苯和6，13-二氢并五苯。这就提出了一种类似于其他多芳烃的观察到的歧化反应的可能机理的建议，它可能是解释石墨形成的前体。开发了几种基于硅和PET的场效应晶体管平台，用于测量薄膜状态下材料的迁移率。对这些平台和单晶器件进行了严格的检查，以便从理论上基于硅技术并在商业上基于柔性基板上的单个器件确定最佳的器件设计，以获得最高的迁移率数据。新颖的FET器件设计是在硅和PET以及每个常用的通用栅极器件上每个器件具有一个栅极的构造。发现与普通栅极方法相比，单个栅极器件的去平面化效应和较差的栅极绝缘体质量导致较低的整体性能；然而，通过场调制观察到良好的晶体管性能。另外，这些薄膜被实现为无机-有机混合和纯有机固态光伏电池。在器件材料的薄膜特性与器件的整体性能之间得出了相关性。已确定沉积在器件上的每个后续层都会导致平坦化效果，并且单个层越原始，器件性能就越好。杂种电池在VOC = 0.8V和JSC = 55muA / cm 2下执行。

著录项

  • 作者

    Roberson, Luke Bennett.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Chemistry Polymer.; Chemistry Organic.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 143 p.
  • 总页数 143
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 高分子化学（高聚物）;有机化学;
  • 关键词

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