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Novel design of monolithically integrated photonic devices: Teardrop laser and polarization rotator-splitter.

机译：单片集成光子器件的新颖设计：泪珠激光器和偏振旋转分束器。

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摘要

In this dissertation, we report two novel designs of monolithically integrated photonic devices, a single facet teardrop shape laser which can be used as an on-chip reflector, and a mode-evolution-based polarization rotator-splitter which enables polarization division multiplexing for high-speed optical communications.;The matched bend criterion method for effectively reducing the straight-bend-straight transition loss in planar optical waveguide, is applied to design a single facet teardrop laser utilizing an on-chip loop mirror reflector. Simulations of a matched bends teardrop reflector show a great improvement in power reflectance (97%) over unmatched-bend designs (10%). The teardrop laser is fabricated by deep etching and non-selective sidewall oxidation of an 808 nm AlGaAs/InAlGaAs/GaAs heterostructure. The resulting high-index-contrast ridge waveguide laser exhibits a low threshold current of 43 mA, a high slope efficiency of 0.465 W/A, and a single spectral lasing mode with a side mode suppression ratio of 24 dB.;To reduce the size of an individual teardrop laser to increase the density of matched bend devices integrated on a single chip, a scaling rule is introduced for reducing the dimensions of a matched waveguide bend without inducing additional transition loss. Mathematical expressions describing the wave propagation in the bend are obtained via a combination of analytical analysis and numerical calculations. These expressions show that if the bend radius R shrinks discretely by n=(m1/m2)3 times, where m1 and m2 are the integer number of beat lengths in the original and scaled matched bends, respectively, and the effective width of the waveguide is reduced also by n1/3 times, then the loss of the matched bend (straight-curved-straight waveguide) transition will remain constant.;A mode-evolution-based polarization rotator-splitter built on an InP substrate is also proposed by combining a mode converter and an adiabatic asymmetric Y-coupler. The mode converter, consisting of a bi-level taper and a width taper, effectively converts the fundamental TM mode into the second order TE mode without changing the polarization of the fundamental TE mode. The following adiabatic asymmetric Y-coupler splits the fundamental and the second order TE modes and also converts the second order TE mode into the fundamental TE mode. A shallow etched structure is proposed for the width taper to enhance the polarization conversion efficiency. The device has a total length of 1350 mum, a polarization extinction ratio over 25 dB and an insertion loss below 0.5 dB for both the TE and TM modes, over the entire C+L band wavelength range from 1528 to 1612 nm covering all C+L band. Because the device is designed based on mode evolution principles, it has large fabrication tolerances. The insertion loss remains below 1 dB and the polarization extinction ratio remains over 17 dB with respect to a width variation of +/- 0.12 mum at the wavelength of 1570 nm, or +/- 0.08 mum over the entire C+L band.
机译：在本文中，我们报告了两种新颖的单片集成光子器件设计：可以用作片上反射器的单面泪滴形激光器，以及基于模式演化的偏振旋转分束器，可实现高偏振分复用匹配的弯曲准则方法有效地减少了平面光波导中的直弯直过渡损耗，被用于设计利用片上环形镜反射器的单面泪滴激光器。匹配的弯曲泪珠反射器的仿真显示，与不匹配的弯曲设计（10％）相比，功率反射率（97％）有了很大的提高。泪滴激光器是通过对808 nm AlGaAs / InAlGaAs / GaAs异质结构进行深蚀刻和非选择性侧壁氧化而制成的。所得的高折射率对比脊形波导激光器具有43 mA的低阈值电流，0.465 W / A的高斜率效率以及具有24 dB侧模抑制比的单光谱激光模式。为了增加单个泪滴激光器的密度以增加集成在单个芯片上的匹配弯曲装置的密度，引入了缩放规则以减小匹配波导弯曲的尺寸而不会引起额外的过渡损耗。通过分析分析和数值计算相结合，获得了描述波在弯曲处传播的数学表达式。这些表达式表明，如果弯曲半径R离散地缩小n =（m1 / m2）3倍，其中m1和m2分别是原始和按比例匹配的弯曲中的拍长的整数倍，以及波导的有效宽度如果将其减小n1 / 3倍，则匹配的弯曲（直线弯曲-直线波导）跃迁的损耗将保持恒定。;还提出了一种基于模式演化的基于InP衬底的偏振旋转分束器模转换器和绝热非对称Y耦合器。由双级锥度和宽度锥度组成的模式转换器可有效地将基本TM模式转换为二阶TE模式，而无需更改基本TE模式的极化。下列绝热非对称Y耦合器将基本和二阶TE模式分开，并将二阶TE模式转换为基本TE模式。提出了一种用于宽度锥度的浅蚀刻结构，以提高偏振转换效率。在1528至1612 nm的整个C + L波段波长范围内，该器件的总长度为1350 mum，极化消光比超过25 dB，TE和TM模式的插入损耗均低于0.5 dB， L带。由于该器件是基于模式演化原理设计的，因此具有较大的制造公差。相对于在1570 nm波长处+/- 0.12 mum的宽度变化或在整个C + L波段中+/- 0.08 mm的宽度变化，插入损耗保持在1 dB以下，并且偏振消光比保持在17 dB以上。

著录项

  • 作者

    Yuan, Wangqing.;

  • 作者单位

    University of Notre Dame.;

  • 授予单位 University of Notre Dame.;
  • 学科 Engineering Electronics and Electrical.;Engineering General.
  • 学位 Ph.D.
  • 年度 2013
  • 页码 104 p.
  • 总页数 104
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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