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A 40 GHz Power Amplifier Using a Low Cost High Volume 0.15 um Optical Lithography pHEMT Process.

机译：采用低成本大体积0.15 um光学光刻pHEMT工艺的40 GHz功率放大器。

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摘要

The demand for higher frequency applications is largely driven by bandwidth. The evolution of circuits in the microwave and millimeter frequency ranges always demands higher performance and lower cost as the technology and specification requirements evolve. Thus the development of new processes addressing higher frequencies and bandwidth requirements is essential to the growth of any semiconductor company participating in these markets.;There exist processes which can perform in the higher frequency design space from a technical perspective. However, a cost effective solution must complement the technical merits for deployment. Thus a new 0.15 microm optical lithography pHEMT process was developed at TriQuint Semiconductor to address this market segment. A 40 GHz power amplifier has been designed to quantify and showcase the capabilities of this new process by leveraging the existing processing knowledge and the implementation of high frequency scalable models.;The three stage power amplifier was designed using the TOM4 scalable depletion mode FET model. The TriQuint TQP15 Design Kit also implements microstrip transmission line models that can be used for evaluating the interconnect lines and matching networks. The process also features substrate vias and the thin film resistor and MIM capacitor models which utilize the capabilities of the BCB process flow. During the design stage we extensively used Agilent ADS program for circuit and EM simulation in order to optimize the final design. Special attention was paid to proper sizing of devices, developing matching circuits, optimizing transmission lines and power combining.;The final design exhibits good performance in the 40 GHz range using the new TQP15 process. The measured results show a gain of greater than 13 dB under 3 volt drain voltage and a linear output power of greater than 28 dBm at 40 GHz. The 40 GHz power amplifier demonstrates that the new process has successfully leveraged an existing manufacturing infrastructure and has achieved repeatability, high volume manufacturing, and low cost in the millimeter frequency range.
机译：对更高频率应用的需求很大程度上取决于带宽。随着技术和规格要求的发展，微波和毫米频率范围内电路的发展总是要求更高的性能和更低的成本。因此，针对更高频率和带宽要求的新工艺的开发对于参与这些市场的任何半导体公司的成长都是必不可少的。从技术的角度来看，存在可以在更高频率的设计空间中执行的工艺。但是，具有成本效益的解决方案必须补充部署的技术优势。因此，TriQuint Semiconductor开发了一种新的0.15微米光学光刻pHEMT工艺来解决这一细分市场。通过利用现有的处理知识和高频可扩展模型的实施，已设计出40 GHz功率放大器来量化和展示此新工艺的功能;三级功率放大器是使用TOM4可扩展耗尽型FET模型设计的。 TriQuint TQP15设计套件还实现了微带传输线模型，可用于评估互连线和匹配网络。该工艺还具有衬底通孔以及利用BCB工艺流程功能的薄膜电阻器和MIM电容器模型。在设计阶段，我们广泛使用Agilent ADS程序进行电路和EM仿真，以优化最终设计。特别注意了设备的正确尺寸，开发匹配电路，优化传输线和功率组合。;最终的设计使用新的TQP15工艺在40 GHz范围内表现出良好的性能。测量结果显示，在3伏漏极电压下，增益大于13 dB，在40 GHz下的线性输出功率大于28 dBm。 40 GHz功率放大器表明，新工艺已成功利用了现有的制造基础设施，并在毫米频率范围内实现了可重复性，大批量生产以及低成本。

著录项

  • 作者

    Mays, Kenneth W.;

  • 作者单位

    Portland State University.;

  • 授予单位 Portland State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.S.
  • 年度 2012
  • 页码 76 p.
  • 总页数 76
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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