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首页> 外文学位 >Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon.
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Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon.

机译：具有集成放大器的压阻式压力传感器，使用金属感应的横向结晶多晶硅实现。

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摘要

Micromachined sensors and actuators have been investigated and industrially produced for more than twenty years. The most widely used sensing principle, especially for pressure sensors, is piezoresistive effect of the silicon, due to its simple fabrication process, measurement circuit and so on. To date, devices based on piezoresistive strain sensors are mostly realized on single-crystal (c-Si) substrates. However, a major problem of this approach is that significant drift is produced by the leakage current of the pn junctions used to isolate the piezoresistors. Therefore, the low-pressure chemical vapor deposited polycrystalline silicon (poly-Si) was used to solve this problem using insulator, such as oxide, but not pn junctions to isolate the piezoresistors. However, because of the inferior electrical properties of the material, integration of mechanical sensing and electronic signal-processing devices on such poly-Si has not been seriously considered.; In our work, the metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) is developed to form poly-Si with significantly improved material properties. Further enhancement is obtained by subjecting MILC poly-Si to a high-temperature re-crystallization (RC) step. RC-MILC poly-Si piezoresistors with improved gauge factor, reduced noise, lower temperature coefficient of resistance and transistors with performance approaching those built on c-Si have been obtained. The nickel concentration effect in transistors was also investigated.; An RC-MILC poly-Si piezoresistive pressure sensor with integrated amplifier has been designed, fabricated, and tested. The integrated one-stage amplifier has DC gain of about 30dB. Airborne sound sensitivity of 50muV/Pa and a flat frequency response within +/-3dB between 100 Hz and 8 kHz has been measured. Many methods are proposed to further increase the sensitivity by reducing the residual stress of the sensing diaphragm.; At last, another device, silicon capacitive microphone, is developed. The equivalent circuit of the microphone was developed, including acoustic, mechanical and electrical parts. A very simple fabrication is developed. The device shows sensitivities of 300muV/Pa with bias voltage 8V.
机译：对微机械传感器和执行器的研究和工业生产已有二十多年的历史。由于硅的制造工艺简单，测量电路简单等原因，因此最广泛使用的传感原理（尤其是对于压力传感器而言）是硅的压阻效应。迄今为止，基于压阻应变传感器的器件大多在单晶（c-Si）衬底上实现。但是，这种方法的主要问题是，用于隔离压敏电阻的pn结的泄漏电流会产生明显的漂移。因此，使用低压化学气相沉积的多晶硅（poly-Si）来解决此问题，方法是使用绝缘体（例如氧化物），而不使用pn结隔离压电电阻器。然而，由于该材料的电性能较差，尚未认真考虑将机械感测和电子信号处理设备集成在这种多晶硅上。在我们的工作中，开发了非晶硅（a-Si）的金属诱导的横向结晶（MILC），以形成具有显着改善的材料性能的多晶硅。通过对MILC多晶硅进行高温重结晶（RC）步骤，可以获得进一步的增强。已获得具有改进的规格系数，降低的噪声，较低的电阻温度系数和性能接近基于c-Si的晶体管的RC-MILC多晶硅压敏电阻。还研究了晶体管中镍浓度的影响。具有集成放大器的RC-MILC多晶硅压阻式压力传感器已经过设计，制造和测试。集成的一级放大器的直流增益约为30dB。空中声灵敏度为50muV / Pa，在100 Hz和8 kHz之间的频率响应平坦度在+/- 3dB之内。提出了许多方法来通过减小感测膜片的残余应力来进一步提高灵敏度。最后，开发了另一种设备，硅电容麦克风。开发了麦克风的等效电路，包括声学，机械和电气部件。开发了非常简单的制造方法。该器件在8V偏置电压下的灵敏度为300muV / Pa。

著录项

  • 作者

    Li, Gang.;

  • 作者单位

    Hong Kong University of Science and Technology (People's Republic of China).;

  • 授予单位 Hong Kong University of Science and Technology (People's Republic of China).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 125 p.
  • 总页数 125
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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