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Effect of space charges on micro- to nanoscale electrostatic actuation.

机译：空间电荷对微米至纳米级静电驱动的影响。

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摘要

The effect of the space charges on the electrodes becomes important on micro- to nanoscale electrostatic actuations because the appropriate phenomenological electrostatic length scale is on the order of the physical scale of the system. A 1-D electromechanical model has been developed to provide quantitative analysis of the effect of the space charges. The electrostatic forces developed between doped silicon/gap/doped silicon electrodes are calculated based on this 1-D model. Departures well over two orders of magnitude in the predicted forces are possible with the consideration of the space charge effect. One key concept that comes out from the theoretical model is the characteristic voltage of a system. Through an example of an electrostatic actuator with a metal/gap/dielectric/doped silicon layered configuration, we demonstrated that when the applied voltage to the actuator is within one order of magnitude of the characteristic voltage, the real electric field within the gap can significantly differ from the 'ideal' electric field predicted without the consideration of the space charges. The characteristic voltage is determined by the surface potential of the space charge layer and the work function difference between the electrodes. Since the surface potential is a quantity that can be measured experimentally, the proposed model can be used to determine the electrostatic force affected by the space charge with an arbitrary charge distribution, without needing to know the exact form of charge distributions. Theoretical results are supported by a set of orthogonal experiments. In the first experiment, the electrostatic force is measured directly using a conductive AFM probe as force sensor. Experimental data demonstrating the effect of the characteristic voltage on the electrostatic force are presented. In the second experiment, the surface potential of the sample is measured using a scanning Kelvin force microscope (SKFM). Experimental data showed that SKFM measurements can be used to determine the characteristic voltage a system experimentally.
机译：电极上的空间电荷的影响在微米至纳米级的静电激励中变得很重要，因为适当的现象学静电长度尺度在系统的物理尺度上。一维机电模型已经开发出来，可以对空间电荷的影响进行定量分析。基于该一维模型计算在掺杂的硅/间隙/掺杂的硅电极之间产生的静电力。考虑到空间电荷效应，可能会在预计的力中偏离两个数量级以上。从理论模型得出的一个关键概念是系统的特征电压。通过具有金属/间隙/电介质/掺杂硅层结构的静电执行器的示例，我们证明了当施加到执行器的电压在特征电压的一个数量级之内时，间隙内的实际电场会显着与不考虑空间电荷而预测的“理想”电场不同。特征电压由空间电荷层的表面电势和电极之间的功函数差确定。由于表面电势是可以通过实验测量的量，因此所提出的模型可以用于确定受空间电荷影响的静电力，该电荷具有任意电荷分布，而无需知道电荷分布的确切形式。理论结果得到一组正交实验的支持。在第一个实验中，直接使用导电AFM探针作为力传感器来测量静电力。实验数据表明了特征电压对静电力的影响。在第二个实验中，使用扫描开尔文力显微镜（SKFM）测量样品的表面电势。实验数据表明，SKFM测量可用于通过实验确定系统的特征电压。

著录项

  • 作者

    Wu, Yan.;

  • 作者单位

    University of Illinois at Urbana-Champaign.;

  • 授予单位 University of Illinois at Urbana-Champaign.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 97 p.
  • 总页数 97
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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