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Metallic to insulating transition in disordered pulsed laser deposited silicide thin films.

机译：无序脉冲激光沉积硅化物薄膜中的金属到绝缘的转变。

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摘要

A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native SiOx layer. This transition produced a change in resistance of 5 orders of magnitude at a temperature of ∼250 K. To the best of the author's knowledge, this effect has not been reported in the literature prior to this study. This work reports a systematic experimental investigation carried out to understand the fundamental mechanism involved in the manifestation of this metal-to-insulator transition. The films were deposited using the pulsed laser deposition technique (PLD) in a base vacuum of the order of 10-6 torr at 400°C and room temperature. Several experiments were systematically conducted to understand the nature of the transition and the current path. Deposition of films on different substrates and the deposition of different transition metal films were made to narrow down the physical origin of the transition in the sample. Temperature-dependent resistance measurements not only exhibited a transition but also suggested more than one conduction mechanism. This is confirmed by the data collected for the IV curves. Current and voltage have a linear relation at temperatures greater than the transition temperature, and a non-linear relation at lower temperatures. Magnetoresistance (MR) measurements revealed a quadratic dependence of the resistance on the applied magnetic field. This is an indication that the MR observed is due to Lorentz forces acting on the charge carriers. Transmission electron microscopy and x-ray photoelectron spectroscopy have identified different layers that are believed to be responsible for the observed transition. X-ray diffraction (XRD) experiments were conducted to identify any crystalline ordering. Films that have been studied using XRD revealed that the layers were amorphous.
机译：当沉积在具有天然SiOx层的Si基板上时，在铁，氧化铁，硅化铁和硅化钴薄膜中观察到金属到绝缘的过渡。这种转变在约250 K的温度下产生了5个数量级的电阻变化。据作者所知，此研究之前尚未在文献中报道过这种作用。这项工作报告进行了系统的实验研究，以了解这种金属向绝缘体转变的表现形式所涉及的基本机理。使用脉冲激光沉积技术（PLD）在400°C和室温下在10-6 torr量级的基本真空中沉积膜。系统地进行了一些实验，以了解过渡的性质和当前路径。进行膜在不同基板上的沉积以及不同过渡金属膜的沉积以缩小样品中过渡的物理起源。与温度有关的电阻测量不仅显示出转变，而且还提出了不止一种传导机制。通过IV曲线收集的数据可以证实这一点。电流和电压在高于转变温度的温度下具有线性关系，而在较低温度下具有非线性关系。磁阻（MR）测量显示电阻对所施加磁场的二次依赖性。这表明观察到的MR是由于作用在电荷载体上的洛伦兹力引起的。透射电子显微镜和X射线光电子能谱已经确定了不同的层，这些层被认为是所观察到的过渡的原因。进行了X射线衍射（XRD）实验，以确定任何晶体有序。使用XRD研究的薄膜表明这些层是非晶的。

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  • 作者

    Abou Mourad, Houssam.;

  • 作者单位

    University of South Florida.;

  • 授予单位 University of South Florida.;
  • 学科 Physics Condensed Matter.; Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 128 p.
  • 总页数 128
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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