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首页> 外文学位 >Silicon oxide and silicon nitride etch mechanisms in nitrogen trifluoride/ethylene plasma.
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Silicon oxide and silicon nitride etch mechanisms in nitrogen trifluoride/ethylene plasma.

机译：三氟化氮/乙烯等离子体中的氧化硅和氮化硅蚀刻机理。

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摘要

Low-pressure inductive plasma was used to study SiO 2 and Si3N4 etching with the NF3/C 2H4-based gas chemistry. NF3 and C2H 4 were used so that fluorine and carbon could be supplied from parent gases other than strongly global warming fluorocarbons, which are conventionally used in industry. Experiments were performed at low pressure (10 mTorr) and low flow rates to minimize production of global-warming CFx species. Selective etching of SiO2 to Si3N4 was not achieved. Etch rates of SiO2 over a wide range of conditions are less than 0.8 times the Si3N4 etch rates. Changing ion energy distributions at the oxide or nitride surface by varying the bias frequency significantly changed the etch rates of both materials but did not strongly affect etch mechanisms or the selectivity. Ex-situ X-ray photoelectron spectroscopy was employed to determine the characteristics of a very thin steady-state film, in order to establish likely etch mechanisms. CHx F, CF2, and CF3 were produced but in small concentrations compared to CHx and CN, as supported by mass spectrometry and XPS results. The C 1s spectra from etched oxide samples show a large percentage of HxC-CHx structures compared to other carbon-containing species. On the other hand, Si3N4 appears to react easily with HxC-CHx structures, yielding CN-bearing etch products and SiC. Although nitride can react quickly with saturated hydrocarbon structures, a too large concentration of HxC-CHx decelerates the removal process of CN-containing etch products from the surface and can lower the nitride etch rate. The lack of selectivity is not limited to C2H 4. Etch rate and selectivity results of NF3-based discharges fed with C2H2, C4H10, and CH 3F are similar to those of the NF3/C2H4 plasma. Comparisons of normalized F 1s spectra of nitride and oxide etched under the same conditions show that relative concentrations of CF2 and CF3 on SiO2 are much lower than the concentrations on Si3N4. It appears that SiO2 preferentially reacts with CF2 and CF3 only but not with HxC-CH x or CHxF. Differences in the abilities of SiO2 and Si3N4 to react with HxC-CHx structures contributed to higher etch rates of Si3N4.
机译：低压感应等离子体用于基于NF3 / C 2H4的气体化学研究SiO 2和Si3N4蚀刻。使用NF3和C2H 4可以从母气中供应氟和碳，而不是工业上常规使用的强烈全球变暖的碳氟化合物。实验是在低压（<10 mTorr）和低流速下进行的，以最大程度地减少全球变暖的CFx物质的产生。没有实现将SiO 2选择性蚀刻为Si 3 N 4。 SiO 2的蚀刻速率在宽范围的条件下小于Si3N4蚀刻速率的0.8倍。通过改变偏置频率来改变氧化物或氮化物表面的离子能量分布，可以显着改变两种材料的蚀刻速率，但不会严重影响蚀刻机理或选择性。为了建立可能的蚀刻机制，采用了非原位X射线光电子能谱法来确定非常薄的稳态膜的特性。 CHx F，CF2和CF3生成，但与CHx和CN相比浓度低，这在质谱和XPS结果的支持下。与其他含碳物质相比，蚀刻氧化物样品的C 1s光谱显示出很大比例的HxC-CHx结构。另一方面，Si3N4似乎易于与HxC-CHx结构反应，从而产生含CN的蚀刻产物和SiC。尽管氮化物可以与饱和烃结构快速反应，但是过高的HxC-CHx浓度会降低从表面去除含CN蚀刻产物的过程，并降低氮化物蚀刻速率。选择性的缺乏不仅限于C2H4。C2H2，C4H10和CH 3F进料的基于NF3的放电的刻蚀速率和选择性结果与NF3 / C2H4等离子体的相似。比较在相同条件下蚀刻的氮化物和氧化物的归一化F 1s光谱，结果表明SiO2上CF2和CF3的相对浓度远低于Si3N4上的浓度。似乎SiO2仅优先与CF2和CF3反应，而不与HxC-CH x或CHxF反应。 SiO 2和Si 3 N 4与H x C-CH x结构反应的能力的差异导致了较高的Si 3 N 4蚀刻速率。

著录项

  • 作者

    Machima, Puthajat.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Physics Fluid and Plasma.; Engineering General.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 269 p.
  • 总页数 269
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;工程基础科学;
  • 关键词

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