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Multifractal analysis of extended states and universality in the IQHE with gate-controlled spin splitting in the LLL approximation.

机译:对IQHE中扩展态和通用性的多重分形分析,LLL近似中具有门控自旋分裂。

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摘要

The discovery of the Integer Quantum Hall Effect gave rise to a great deal of research to explain the experimental observations. Although a little progress could be made from analytical approaches the success of numerical solutions to the problem started to take off since most of the experimental data could be understood in terms of the numerical models. With these models it became possible to explain the IQHE as a transition between localized and extended states. Several authors were able to describe the transition from the properties of extended states which show a multifractal nature.;In this work we will present a numerical model that shows the existence of localized and extended states; and we will be able to characterize the transition in terms of the properties of these states. With the numerical solutions it is possible to obtain the multifractal spectra of extended states and show that the scaling exponents exhibit universality relative to disorder strength and system size as was determined several years ago. Although the subject has been abandoned for some time since all the experimental data has be explained through numerical models, with the recent interest on spin FET transistors we considered that it would be interesting to investigate the transition by taking into account the spin of the electron.;In this dissertation we present results based on the multifractal analysis of extended states in the lowest Landau level approximation when the interaction between the spin magnetic moment of the electron and its orbital motion are taken into account. We obtain results that predict the universality of multifractal spectra in the IQHE when the spin-orbit coupling term is introduced in the Hamiltonian. The universal behavior of the scaling exponents relative to disorder strength and system size was found earlier ([27], [31] and [34]); but in this case we also predict universality for different values of the spin-orbit coupling parameter which, in principle, can be tuned through the gate voltage.
机译:整数量子霍尔效应的发现引起了大量的研究来解释实验观察。尽管分析方法可以取得一些进展,但是由于大多数实验数据可以通过数值模型来理解,因此数值解决方案的成功开始兴起。使用这些模型,可以将IQHE解释为局部状态和扩展状态之间的过渡。几位作者能够描述具有多重分形性质的扩展状态性质的转变。在本工作中,我们将提供一个数值模型,该模型显示局部状态和扩展状态的存在。并且我们将能够根据这些状态的特性来描述过渡。利用数值解,可以获得扩展态的多重分形谱,并显示出缩放指数相对于无序强度和系统大小具有普遍性,正如几年前确定的那样。尽管自从通过数值模型解释了所有实验数据以来,这个话题已经被抛弃了一段时间,但随着人们对自旋FET晶体管的最新兴趣,我们认为考虑到电子的自旋来研究跃迁将很有趣。 ;在本文中,我们在考虑电子的自旋磁矩与其轨道运动之间的相互作用时,基于最低Landau能级近似下的扩展态的多重分形分析,给出了结果。我们获得的结果可预测当自旋轨道耦合项引入哈密顿量时,IQHE中多形谱的普遍性。标度指数相对于无序强度和系统规模的普遍行为被更早地发现([27],[31]和[34])。但是在这种情况下,我们还预测了自旋轨道耦合参数不同值的普遍性,这些参数原则上可以通过栅极电压进行调整。

著录项

  • 作者

    Hernandez Cooper, Ernesto.;

  • 作者单位

    University of Houston.;

  • 授予单位 University of Houston.;
  • 学科 Condensed matter physics.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 153 p.
  • 总页数 153
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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