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Fabrication and characterization of zinc oxide-based thin film field effect transistors.

机译：氧化锌基薄膜场效应晶体管的制造与表征。

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摘要

Thin-film field-effect transistors have been challenged using wide band gap semiconducting oxides, such as undoped ZnO, 2% phosphorous-doped ZnO, and 2% phosphorous-doped Zn0.9Mg0.1O. High quality gate oxide is needed to enhance the performance of device. We investigated structural and electrical properties of gate dielectrics. Candidates for the gate oxide are CaHfOx and Ce0.33Tb0.67MgAl 11Ox amorphous films.; Studies of the crystallinity of CaHfOx on various substrates showed that calcium hafnate thin film has a high crystallization temperature on Si and Ge substrate. The XRD patterns of CaHfOx on biaxially textured Ni show a well-developed (101) plane at high temperatures. Results show that this perovskite oxide heteroeitaxy of the LaAlO3 substrate develops with CaHfO3(101)//LaAlO3(100). We also investigated recrystallization and dielectric behavior for amorphous CaHfOx films on Si substrates.; We studied the dielectric properties of (Ce,Tb)MgAl11O x films deposited by pulsed-laser deposition. For the ITO substrate, the leakage current density was low and the conduction mechanism was determined to be the Schottky emission model. Interface trap densities between insulator and Si were ∼1 x 1012 eV-1 cm -2 and ∼3 x 1012 eV-1 cm-2 using the Terman and conductance methods, respectively.; We also studied depletion-mode field-effect transistors with undoped ZnO and 2% phosphorous-doped ZnO for an active channel layer. The conductivity of undoped ZnO was observed as a function of channel thickness. Undoped and doped ZnO showed n-type behavior from C-V measurement. Its high carrier concentrations produced a low Ion/Ioff ratio.; We report on enhancement-mode ZnO-based field-effect transistors that utilize an acceptor-doped channel. In particular, the active channel is polycrystalline ZnO doped with Mg, to increase the band gap, and P, to decrease the electron carrier concentration. Devices are realized that display an on/off ratio of 103 and a channel mobility on the order of 5 cm 2/V s. HfO2 serves as the gate dielectric. Capacitance-voltage properties measured across the gate indicate that the ZnO channel is n type. The use of acceptor doping improves control of initial channel conductance while having a minimal impact on channel mobility relative to undoped ZnO polycrystalline channels.
机译：使用宽带隙半导体氧化物，例如未掺杂的ZnO，2％的磷掺杂的ZnO和2％的磷掺杂的Zn0.9Mg0.1O，已经对薄膜场效应晶体管提出了挑战。需要高质量的栅极氧化物来增强器件的性能。我们研究了栅极电介质的结构和电性能。栅氧化物的候选者是CaHfOx和Ce0.33Tb0.67MgAl 11Ox非晶膜。 CaHfOx在各种衬底上的结晶度研究表明，Hafnate薄膜在Si和Ge衬底上具有较高的结晶温度。 CaHfOx在双轴织构Ni上的X射线衍射图在高温下显示出发达的（101）平面。结果表明，LaAlO3基体的钙钛矿氧化物异质共生发生于CaHfO3（101）// LaAlO3（100）。我们还研究了Si衬底上非晶CaHfOx膜的再结晶和介电行为。我们研究了通过脉冲激光沉积法沉积的（Ce，Tb）MgAl11O x薄膜的介电性能。对于ITO基板，漏电流密度低，并且导电机理被确定为肖特基发射模型。使用Terman法和电导法，绝缘体和Si之间的界面陷阱密度分别为〜1 x 1012 eV-1 cm -2和〜3 x 1012 eV-1 cm-2。我们还研究了有源沟道层中未掺杂ZnO和2％磷掺杂ZnO的耗尽型场效应晶体管。观察到未掺杂的ZnO的电导率是沟道厚度的函数。通过C-V测量，未掺杂和掺杂的ZnO显示出n型行为。它的高载流子浓度导致低的Ion / Ioff比。我们报告了利用受主掺杂通道的基于增强模式ZnO的场效应晶体管。特别地，有源沟道是掺杂有Mg的多晶ZnO，以增加带隙，而掺杂P则减小电子载流子浓度。实现了显示开/关比为103且沟道迁移率约为5 cm 2 / V s的设备。 HfO2用作栅极电介质。跨栅测量的电容电压特性表明ZnO通道为n型。相对于未掺杂的ZnO多晶沟道，受体掺杂的使用改善了对初始沟道电导的控制，同时对沟道迁移率的影响最小。

著录项

  • 作者

    Kwon, Yongwook.;

  • 作者单位

    University of Florida.;

  • 授予单位 University of Florida.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 121 p.
  • 总页数 121
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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