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A physically-derived nonquasi-static model of the ferroelectric transistor for computer-aided device simulation and its application in analog circuits.

机译：用于计算机辅助设备仿真的铁电晶体管的物理非准静态模型及其在模拟电路中的应用。

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摘要

The characteristics of the ferroelectric-based common-drain, common-source, common-gate, and differential amplifiers are empirically measured and discussed. The effect of varying the input frequency and load resistance on the phase shift of the output signal, the output voltage, and the voltage gain are determined based on experimental results. Then, a physically-derived nonquasi-static model describing the behavior of the aforementioned ferroelectric amplifier configurations is presented. The model is based on the method of partitioned ferroelectric layer and is valid in accumulation, depletion, and the three inversion cases: weak, moderate, and strong. The equations of this model are based on the ferroelectric polarization equations and the standard MOSFET equations that have been modified to account for the inclusion of the ferroelectric layer. The model code is written in MATLABRTM and outputs voltage plots with respect to time. For each amplifier configuration, the accuracy and effectiveness of the model are verified by a few test cases, where the modeled results are compared to empirically-derived oscilloscope plots. Lastly, the application of ferroelectric electronics in space flight systems is discussed.

机译：基于经验的测量和讨论了基于铁电体的共漏，共源，共栅和差分放大器的特性。根据实验结果确定改变输入频率和负载电阻对输出信号，输出电压和电压增益的相移的影响。然后，提出了描述上述铁电放大器配置的行为的基于物理的非准静态模型。该模型基于划分铁电层的方法，适用于累积，耗尽和三种反演情况：弱，中和强。该模型的方程式基于铁电极化方程和标准MOSFET方程，这些方程经过修改以考虑到铁电层的包含。模型代码用MATLABRTM编写，并输出相对于时间的电压曲线。对于每种放大器配置，通过几个测试案例来验证模型的准确性和有效性，然后将建模结果与根据经验得出的示波器图进行比较。最后，讨论了铁电电子在航天系统中的应用。

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作者
Sayyah, Rana M.;
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作者单位

The University of Alabama in Huntsville.;

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授予单位 The University of Alabama in Huntsville.;
学科 Engineering Computer.;Engineering Electronics and Electrical.
学位 Ph.D.
年度 2012
页码 213 p.
总页数 213
原文格式 PDF
正文语种 eng
中图分类 TS97-4;
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1. A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation - Part I: The ferroelectric common-drain amplifier [J] . Rana Sayyah, Mitchell Hunt, Fat D. Ho Solid-State Electronics . 2013,第auga期

机译：用于计算机辅助设备仿真的铁电放大器的物理非准静态模型-第一部分：铁电共漏放大器
2. A physically-derived nonquasi-static model of ferroelectric amplifiers for computer-aided device simulation - Part II: The ferroelectric common-source and common-gate amplifiers [J] . Rana Sayyah, Mitchell Hunt, Fat D. Ho Solid-State Electronics . 2013,第auga期

机译：用于计算机辅助设备仿真的铁电放大器的物理非准静态模型-第二部分：铁电共源和共栅放大器
3. Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory [J] . Hang-Ting Lue, Chien-Jang Wu, Tseung-Yuen Tseng IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control . 2003,第1期

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4. A PHYSICALLY-DERIVED LARGE-SIGNAL NONQUASI-STATIC MOSFETMODEL FOR COMPUTER AIDED DEVICE AND CIRCUIT SIMULATION PART-HTHE CMOS NOR GATE AND THE CMOS NAND GATE [C] . Michael Walter Payton, Fat Duen Ho IEEE International Symposium on Circuits and Systems . 2005

机译：用于计算机辅助设备和电路仿真部分的物理衍生的大信号非Quasi-静态MOSFEDEL-Hthe CMOS NOR GATE和CMOS NAND门
5. A physically-derived large-signal nonquasi-static MOSFET model for computer aided device and circuit simulation. [D] . Payton, Michael Walter. 2004

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6. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [O] . Ngoc Huynh Van, Jae-Hyun Lee, Dongmok Whang, -1

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7. Modellierung von Quanteneffekten in einem ladungsbasierten MOS-Transistor-Modell zur Simulation von nanoskalierten CMOS-Analogschaltungen [Modeling of quantum effects in a charge-based MOS transistor model for the simulation of nanoscaled CMOS analog circuits] [O] . Stegemann, S., Xiong, J., Mathis, Wolfgang 2009

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8. Shanghai Radio Factory 14. The First in the Country to Specialize in MOS Integrated Circuits. Ideal Semiconductor Devices, Field-Effect Transistors, and MOS Integrated Circuits. [R] . 1982

机译：上海无线电厂14.全国第一家专注于mOs集成电路的无线电厂。理想的半导体器件，场效应晶体管和mOs集成电路。

A physically-derived nonquasi-static model of the ferroelectric transistor for computer-aided device simulation and its application in analog circuits.

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