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MBE-Grown Binary Chalcogenide one-dimensional nanostructures: Synthesis, structural analysis and formation mechanisms.

机译：MBE生长的二元硫属化物一维纳米结构：合成，结构分析和形成机理。

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摘要

Recently, One-dimensional nanostructures such as nanowires, nanograting, and nanotrenches, have attracted great attention due to their important applications in nano science and technology. They are expected to play indispensible roles in the development of innovative nano-scale electronic, optoelectronic and spintronic devices. The binary chalcogenide semiconductors, including ZnSe, ZnO, BixTey and NixSe y etc, are expected to have unique photoelectric, thermoelectric or spintronic properties in the nanoscale, which makes them among the most popular materials used to fabricate 1D nanostructures. In this study, the fabrication and characterization of a number of 1D chalcogenide nanostructures grown by the molecular beam epitaxy (MBE) technique will be discussed.;The highly aligned nanotrenches and nanograting with narrow width below 30nm were fabricated on the ZnSe (100) surfaces using in-situ metal-catalyzed self assembly methods. The orientation, geometry and formation mechanisms of these 1D surface nanostructures were studied through detailed microstructural characterizations. The nanotrenches were found to be induced by mobile AuZndelta nanoparticles through catalyzed decomposition of ZnSe along one specific anti-parallel pair of the 110> direction family. The ZnSe nanograting with the same orientation as that of the nanotrenches, was found to result from an Fe-Se exchange interaction and selective surface decomposition of ZnSe. The unique reflection high energy electron diffraction (RHEED) patterns resulted from the nanograting was fully understood using a model based on Ewald construction.;Two types of binary chalcogenide nanowires, the bismuth telluride nanowires and the Ni3Se4/ZnSe heterostructured nanowires, were also synthesized and studied in this study. The synthesis of bismuth telluride nanowires was achieved using Au-nanoparticles assisted self assembly or vapor-solid-solid (VSS) mechanism. The activation of these two mechanisms was studied, which was found to depend on the density of the Au nanoparticles. To optimize the synthesis of bismuth telluride nanostructures, an effective approach using the ZnSe nanowires as the seeds was demonstrated. The Ni3Se4/ZnSe heterostructured nanowires were grown by an innovative two-step VLS growth mode, which involves the growth of the top Au-catalyzed Ni3Se4 section and the growth of the bottom ZnSe section catalyzed by a hybrid catalyst consisting of the Au head and the top Ni3Se4 section. The underlying physics of the unusual ultra fast growth rate and the preferred orientations of the heterostructured nanowires were also addressed.
机译：近来，诸如纳米线，纳米光栅和纳米沟槽的一维纳米结构由于其在纳米科学和技术中的重要应用而引起了极大的关注。预计它们将在创新的纳米级电子，光电和自旋电子器件的开发中发挥不可或缺的作用。包括ZnSe，ZnO，BixTey和NixSe y等在内的二元硫族化物半导体有望在纳米级具有独特的光电，热电或自旋电子特性，这使其成为用于制造一维纳米结构的最受欢迎的材料。在这项研究中，将讨论通过分子束外延（MBE）技术生长的许多一维硫族化物纳米结构的制备和表征。;在ZnSe（100）表面上制备高度对准的纳米沟槽和窄宽度小于30nm的纳米光栅使用原位金属催化自组装方法。通过详细的微结构表征研究了这些一维表面纳米结构的取向，几何形状和形成机理。发现纳米沟槽由可移动的AuZndelta纳米粒子通过沿着<110>方向族的一个特定的反平行对催化ZnSe的分解而诱导。发现具有与纳米沟槽相同取向的ZnSe纳米光栅是由Fe-Se交换相互作用和ZnSe的选择性表面分解产生的。使用基于Ewald结构的模型充分理解了由纳米光栅产生的独特反射高能电子衍射（RHEED）模式。;还合成了两种类型的二元硫属化物纳米线，碲化铋纳米线和Ni3Se4 / ZnSe异质结构纳米线。在这项研究中学习。碲化铋纳米线的合成是使用金纳米粒子辅助的自组装或汽固固（VSS）机理完成的。研究了这两种机制的激活，这取决于金纳米颗粒的密度。为了优化碲化铋纳米结构的合成，已证明了使用ZnSe纳米线作为种子的有效方法。 Ni3Se4 / ZnSe异质结构纳米线是通过创新的两步VLS生长模式生长的，该模式涉及顶部Au催化的Ni3Se4部分的生长以及底部ZnSe部分的生长，该混合催化剂由Au头和Al2O3组成的混合催化剂催化。 Ni3Se4顶部。还讨论了异常的超快生长速率和异质结构纳米线的首选方向的基本物理原理。

著录项

  • 作者

    Wang, Gan.;

  • 作者单位

    Hong Kong University of Science and Technology (Hong Kong).;

  • 授予单位 Hong Kong University of Science and Technology (Hong Kong).;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 123 p.
  • 总页数 123
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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