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首页> 外文学位 >Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps.
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Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps.

机译：RPECVD制备的硅酸alloy合金的光谱研究：导带/价带偏移能和光学带隙的比较。

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摘要

Aggressive scaling of devices has continued to improve MOSFET transistor performance. As lateral device dimensions continue to decrease, gate oxide thickness must be scaled down. As one of the promising high k alternative gate oxide materials, HfO2 and its silicates were investigated to understand their direct tunneling behavior by studying band offset energies with spectroscopy and electrical characterization.; Local bonding change of remote plasma deposited (HfO2)x(SiO 2)1−x alloys were characterized by Fourier transform infrared (FTIR) spectroscopy, x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) as a function of alloy composition, x. Two different precursors with Hf Nitrato and Hf-tert-butoxide were tested to have amorphous deposition. Film composition was determined off-line by Rutherford backscattering spectroscopy (RBS) and these results were calibrated with on-line AES.; As deposited Hf-silicate alloys were characterized by off-line XPS and AES for their chemical shifts interpreting with a partial charge transfer model as well as coordination changes. Sigmoidal dependence of valence band offset energies was observed. Hf 5d* state is fixed at the bottom of the conduction band and located at 1.3 ± 0.2 eV above the top of the Si conduction band as a conduction band offset by x-ray absorption spectroscopy (XAS). Optical band gap energy changes were observed with vacuum ultra violet spectroscopic ellipsometry (VUVSE) to verify compositional dependence of conduction and valence band offset energy changes. 1 nm EOT normalized tunneling current with Wentzel-Kramer-Brillouin (WKB) simulation based on the band offset study and Franz two band model showed the minimum at the intermediate composition matching with the experimental data. Non-linear trend in tunneling current was observed because the increases in physical thickness were mitigated by reductions in band offset energies and effective mass for tunneling. C-V curves were compared to each other, and more hysteresis was observed with increasing x. Localized Hf 5d* state as a trap site was the reason for hysteresis and its reverse direction with temperature-dependent C-V curves. Temperature-dependent I-V study located Hf 5d* state. For the integration issue, nitridation study was done at the interface and surface, and both. Interfacial nitridaion gave more effective reduction in EOT.
机译：器件的大规模扩展一直在改善MOSFET晶体管的性能。随着横向器件尺寸的不断减小，栅极氧化物的厚度必须缩小。作为有前途的高k替代栅极氧化物材料之一，对HfO2及其硅酸盐进行了研究，以通过光谱学和电学表征研究能带偏移能量来了解其直接隧穿行为。用傅里叶变换红外光谱（FTIR）表征了远程等离子体沉积（HfO 2 ）x（SiO 2 ） 1-x 合金的局部键合变化光谱，X射线光电子能谱（XPS）和俄歇电子能谱（AES）作为合金成分x的函数。测试了带有Hf Nitrato和Hf-叔丁醇的两种不同的前体具有无定形沉积。膜组成通过卢瑟福背散射光谱法（RBS）离线测定，并且这些结果用在线AES进行校准。沉积的Hf-硅酸盐合金通过离线XPS和AES进行表征，可通过部分电荷转移模型以及配位变化解释其化学位移。观察到价带偏移能量的S形关系。 Hf 5d *状态固定在导带的底部，并位于Si导带的顶部上方1.3±0.2 eV，作为通过X射线吸收光谱（XAS）补偿的导带。用真空紫外椭圆偏振光谱法（VUVSE）观察了光学带隙能量变化，以验证传导和价带偏移能量变化的成分依赖性。基于带偏移研究和Franz两频带模型的Wentzel-Kramer-Brillouin（WKB）模拟得出的1 nm EOT归一化隧穿电流表明，中间成分与实验数据相匹配时最小值最小。观察到隧穿电流的非线性趋势，因为物理厚度的增加被带隙偏置能量和隧穿有效质量的减少所减轻。比较了C-V曲线，并且随着x的增加，观察到了更多的磁滞现象。局部Hf 5d *状态为陷阱位点是产生迟滞的原因，其反向方向取决于温度的C-V曲线。温度相关的I-V研究位于Hf 5d *状态。对于集成问题，在界面和表面以及两者均进行了氮化研究。界面氮化可更有效地减少EOT。

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  • 作者

    Hong, Joon Goo.;

  • 作者单位

    North Carolina State University.;

  • 授予单位 North Carolina State University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 138 p.
  • 总页数 138
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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