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Use of dilute hydrofluoric acid and deep eutectic solvent systems for back end of line cleaning in integrated circuit fabrication.

机译：稀氢氟酸和深共熔溶剂体系在集成电路制造中用于生产线后端清洁的用途。

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摘要

Fabrication of current generation integrated circuits involves the creation of multilevel copper/low-k dielectric structures during the back end of line processing. This is done by plasma etching of low-k dielectric layers to form vias and trenches, and this process typically leaves behind polymer-like post etch residues (PER) containing copper oxides, copper fluorides and fluoro carbons, on underlying copper and sidewalls of low-k dielectrics. Effective removal of PER is crucial for achieving good adhesion and low contact resistance in the interconnect structure, and this is accomplished using wet cleaning and rinsing steps. Currently, the removal of PER is carried out using semi-aqueous fluoride based formulations. To reduce the environmental burden and meet the semiconductor industry's environmental health and safety requirements, there is a desire to completely eliminate solvents in the cleaning formulations and explore the use of organic solvent-free formulations.;The main objective of this work is to investigate the selective removal of PER over copper and low-k (Coral and Black DiamondRTM) dielectrics using all-aqueous dilute HF (DHF) solutions and choline chloride (CC) -- urea (U) based deep eutectic solvent (DES) system. Initial investigations were performed on plasma oxidized copper films. Copper oxide and copper fluoride based PER films representative of etch products were prepared by ashing g-line and deep UV photoresist films coated on copper in CF4/O2 plasma. PER removal process was characterized using scanning electron microscopy and X-ray photoelectron spectroscopy and verified using electrochemical impedance spectroscopy measurements.;A PER removal rate of ~60 A/min was obtained using a 0.2 vol% HF (pH 2.8). Deaeration of DHF solutions improved the selectivity of PER over Cu mainly due to reduced Cu removal rate. A PER/Cu selectivity of ~20:1 was observed in a 0.05 vol% deaerated HF (pH 3). DES systems containing 2:1 U/CC removed PER at a rate of ~10 and ~20 A/min at 40 and 70°C respectively. A mixture of 10-90 vol% de-ionized water (W) with 2:1 U/CC in the temperature range of 20 to 40°C also effectively removed PER. Importantly, etch rate of copper and low-k dielectric in DES formulations were lower than that in conventional DHF cleaning solutions.
机译：电流产生集成电路的制造涉及在线路处理的后端期间创建多层铜/低k电介质结构。这是通过对低k介电层进行等离子刻蚀以形成通孔和沟槽来完成的，该工艺通常会在底层铜和低侧壁上留下含有氧化铜，氟化铜和碳氟化合物的聚合物状刻蚀后残留物（PER）。 -k电介质。有效去除PER对于在互连结构中实现良好的附着力和低接触电阻至关重要，这可以通过湿法清洁和冲洗步骤来实现。目前，使用基于半氟化物的配方进行PER的去除。为了减轻环境负担并满足半导体行业对环境健康和安全的要求，希望完全消除清洗配方中的溶剂，并探索使用无有机溶剂的配方。使用全水稀释HF（DHF）溶液和氯化胆碱（CC）-尿素（U）的深共熔溶剂（DES）系统选择性去除铜和低k（Coral和Black DiamondRTM）电介质上的PER。对等离子体氧化铜膜进行了初步研究。通过在CF4 / O2等离子体中灰化涂覆在铜上的g线和深紫外光致抗蚀剂膜，可以制备出代表蚀刻产品的氧化铜和氟化铜基PER膜。使用扫描电子显微镜和X射线光电子能谱对PER去除过程进行了表征，并使用电化学阻抗谱测量进行了验证;使用0.2％体积的HF（pH 2.8）获得的PER去除率为〜60 A / min。 DHF溶液的脱气提高了PER对Cu的选择性，这主要是由于降低了Cu去除率。在0.05vol％的脱气HF（pH 3）中观察到PER / Cu选择性为〜20：1。包含2：1 U / CC的DES系统分别在40和70°C下以〜10和〜20 A / min的速率去除了PER。在20至40°C的温度范围内，将10-90 vol％的去离子水（W）与2：1 U / CC的混合物也可以有效去除PER。重要的是，DES配方中铜和低k电介质的蚀刻速率低于传统DHF清洗溶液中的蚀刻速率。

著录项

  • 作者

    Padmanabhan Ramalekshmi Thanu, Dinesh.;

  • 作者单位

    The University of Arizona.;

  • 授予单位 The University of Arizona.;
  • 学科 Engineering Electronics and Electrical.;Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 162 p.
  • 总页数 162
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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