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The growth and fabrication of terahertz emitting devices and lasers.

机译：太赫兹发射器件和激光器的生长和制造。

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摘要

Over the last few years, the advent of terahertz (THz) technology has initiated the exploration of novel approaches to applications in such areas as homeland security, biomedical non-ionizing imaging, secure short-range and satellite-to-satellite communications, chemical and environmental sensing, quality control, and ranging. The broad commercialization of these techniques, however, requires compact, reliable, and low cost terahertz active devices. Si-based THz devices are especially attractive due to possible integration with complementary MOS circuitry, and to lower free-carrier and reststrahlen-band absorption than in typical III-V compound semiconductors.; In this dissertation, we describe several approaches that can be utilized to fabricate electrically pumped Si-based CMOS compatible terahertz emitters. We have demonstrated terahertz-emitting devices utilizing intersubband transitions in strained silicon-germanium quantum cascades. We employed a novel approach involving transitions between confined states associated with light-holes and heavy-holes, which may lead to Si-based quantum well terahertz light emitters with higher output power than previously demonstrated. The design and fabrication of these devices is outlined.; Terahertz emission from devices using transitions between resonant acceptor states formed by the built-in strain in boron-doped epitaxial SiGe quantum wells was also achieved. Population inversion can be realized using this technique, and a THz laser source is feasible.; We have furthermore shown terahertz emission from dopant energy level transitions in electrically pumped Si devices containing shallow acceptors and donors. The results of theoretical modeling explaining the experimentally observed dependence of emitted power on the device temperature and pumping current are presented.; We will give a comparison of these techniques concerning emission frequency, fabrication complexity, operating temperature, expected power output, and potential for refinement.; We have also investigated the feasibility of electrically tunable THz emitter based on intersubband transitions in asymmetric SiGe quantum wells. Theoretical calculations of the confined state energies in stepped quantum wells are presented in combination with a design for a cascaded device.
机译：在过去的几年中，太赫兹（THz）技术的出现引发了对在国土安全，生物医学非电离成像，安全的短程和卫星对卫星通信，化学和生物医学等领域的新型应用方法的探索。环境感知，质量控制和范围。然而，这些技术的广泛商业化需要紧凑，可靠和低成本的太赫兹有源器件。与典型的III-V化合物半导体相比，基于Si的THz器件特别有吸引力，这是因为它可以与互补MOS电路集成，并降低了自由载流子和剩余带的吸收。在本文中，我们描述了几种可用于制造电泵浦硅基CMOS兼容太赫兹发射器的方法。我们已经证明了在应变硅锗量子级联中利用子带间跃迁的太赫兹发射器件。我们采用了一种新颖的方法，该方法涉及与轻孔和重孔相关的受限状态之间的过渡，这可能导致基于Si的量子阱太赫兹发光体的输出功率高于先前展示的功率。概述了这些设备的设计和制造。还实现了器件的太赫兹发射，该器件利用掺硼外延SiGe量子阱中的内置应变形成的共振受体状态之间的跃迁进行了发射。使用该技术可以实现种群反转，并且太赫兹激光源是可行的。我们还显示了在包含浅受主和施主的电抽运Si器件中，来自掺杂剂能级跃迁的太赫兹发射。给出了理论建模的结果，该理论解释了实验观察到的发射功率对器件温度和泵浦电流的依赖性。我们将对这些技术进行比较，这些技术涉及发射频率，制造复杂性，工作温度，预期功率输出和改进潜力。我们还研究了在非对称SiGe量子阱中基于子带间跃迁的电可调太赫兹发射器的可行性。结合级联器件的设计，介绍了阶梯式量子阱中约束态能量的理论计算。

著录项

  • 作者

    Troeger, Ralph Thomas.;

  • 作者单位

    University of Delaware.;

  • 授予单位 University of Delaware.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 214 p.
  • 总页数 214
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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