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首页> 外文学位 >Physical vapor deposition and analysis of copper indium aluminum diselenide thin films for high band gap solar cells.
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Physical vapor deposition and analysis of copper indium aluminum diselenide thin films for high band gap solar cells.

机译：高带隙太阳能电池用铜铟铝二硒化物薄膜的物理气相沉积和分析。

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CuInSe2 films and related alloys have been used to fabricate the highest efficiency thin film solar cells. Alloying CuInSe2 with CuAlSe2 provides a way to engineer the band gap of the resulting films from 1 to 2.7 eV, thereby providing a pathway for improving device performance. In this work, thin films of CuIn1−xAlxSe 2 obtained by multi-source PVD were characterized and investigated for their potential use as high band gap solar cells. The band gap of the films was varied by controlling the [Al]/[Al + In] ratio. Deposition of these films with varying [Cu]/[Al + In] ratios and thickness (1–4 μm) was carried out at substrate temperatures from 350–530°C.; CuIn1−xAlxSe2 based solar cells have been fabricated using the structure glass/Mo/CuIn1−xAl xSe2/CdS/ZnO/grid. The effect of varying the band gap on device performance will be discussed. The highest efficiency obtained in this work is 11% using a film with Eg ≈ 1.3 eV. For high Al content, x > 0.3, device-performance decreases mainly due to poor FF similar to that observed in CuIn1−xGaxSe2 devices and is attributed to poor minority carrier collection.; For CuIn1−xAlxSe2 films with x = 1, data is analyzed and presented with respect to [Cu]/[Al] and Se to total metal flux ratio, RSe/RM. Phase analysis shows that the resulting films contain different phases that depend on these parameters. Several of these films also contain concentrations of oxygen varying from 12 to 60 at. % as the [Cu]/[Al] ratio decreases. For RSe/R M > 10, a new structure we label as CuxAlySe z was observed. The oxygen content in all of the films obtained under RSe/RM > 10 vary between 1–3 at. %. Based on the Cu-Se, Al-Se, Cu-Al binary and the Cu2Se-Al2Se 3 pseudo-binary phase diagrams, a phenomenological film growth model is presented showing that the film growth kinetics are controlled by the delivery of Se.
机译：CuInSe 2 薄膜及相关合金已被用于制造效率最高的薄膜太阳能电池。将CuInSe 2 与CuAlSe 2 合金化提供了一种方法，可将所得薄膜的带隙从1 eV调节到2.7 eV，从而提供了改善器件性能的途径。在这项工作中，表征了通过多源PVD获得的CuIn 1-x Al x Se 2 薄膜并研究了其潜在用途作为高带隙太阳能电池。通过控制[Al] / [Al + In]的比率来改变膜的带隙。这些膜以[Cu] / [Al + In]比和厚度（1-4μm）变化的沉积是在350-530°C的基板温度下进行的。使用玻璃/ Mo / CuIn 1-x <结构制造了基于CuIn 1-x Al x Se 2 的太阳能电池/ sub> Al x Se 2 / CdS / ZnO / grid。将讨论改变带隙对器件性能的影响。使用具有E g ＆ap;的薄膜，在这项工作中获得的最高效率为11％。 1.3 eV。对于较高的Al含量（x> 0.3），器件性能下降的主要原因是FF差，类似于在CuIn 1-x Ga x Se 2 中观察到的FF。 sub>设备，并归因于少数族裔携带者收集不足。对于x = 1的CuIn 1-x Al x Se 2 薄膜，分析并给出了有关[Cu] / [Al]的数据]和Se与总金属通量之比，R Se / R M 。相分析表明，所得薄膜包含取决于这些参数的不同相。这些薄膜中的一些还含有浓度为12至60 at。5的氧气。当[Cu] / [Al]比降低时，％。对于R Se / R M x Al y Se z 。在R Se / R M 2 Se-Al 2 Se 3 伪二元相图中，提出了一种现象学的薄膜生长模型，该模型表明薄膜生长动力学受Se的传递控制。

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  • 作者

    Haimbodi, Moses Warotua.;

  • 作者单位

    University of Delaware.;

  • 授予单位 University of Delaware.;
  • 学科 Engineering Materials Science.; Physics Condensed Matter.; Energy.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 226 p.
  • 总页数 226
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;能源与动力工程;
  • 关键词

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