The subject of this thesis is fabrication process development and characterization of two-dimensional photonic crystal single defect cavities. These devices are potential candidates to become one of the building blocks of photonic integrated circuits, which are expected to be valuable in optical telecommunications.; Photonic crystal cavities were designed based on results from the computer simulations, which were obtained from various sources. To make the cavities, a fabrication process, which involved sub-micron patterning and etching techniques, was developed. High quality structures were obtained after the optimization of the different parameters of the process.; Photoluminescence spectral measurements were used to observe the signature of the cavity mode in the structure. The theory of spontaneous emission in inhomogeneous media is presented to explain the experimental observations. This theory is applied to the photoluminescence exhibited by the semiconductor materials. From the photoluminescence spectral measurements, the cavity tuning and quality factor Q can be estimated. Absorption and Radiation loss mechanisms present in the cavities were separated by performing a curve fit of the loss rate, 1/Q, versus the wavelength-dependent absorption coefficient of the material used. By extrapolating this curve to zero absorption, the radiation loss rate 1/Qrad of the cavity is obtained.; An alternative characterization method based on elastic scattering of light was implemented. This method consists of the measurement of the spectrum of the light scattered from the cavity when a tunable light source is focused onto it. The wavelength dependence of the scattered light intensity can be used to estimate the cavity quality factor, Q, in a way similar to the photoluminescence spectrum measurements. This experimental method is useful to determine the maximum possible Q that occurs when the cavity does not absorb light at the cavity resonance wavelength.
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机译：本文的主题是二维光子晶体单缺陷腔的制造工艺发展与表征。这些设备是成为光子集成电路构建模块之一的潜在候选者，它们有望在光通信中有价值。根据从各种来源获得的计算机模拟结果，设计了光子晶体腔。为了制造空腔，开发了涉及亚微米图案化和蚀刻技术的制造工艺。经过优化工艺的不同参数后，获得了高质量的结构。使用光致发光光谱测量来观察结构中腔模的特征。提出了非均匀介质中自发发射的理论，以解释实验观察。该理论被应用于半导体材料所展现的光致发光。根据光致发光光谱测量，可以估算出腔调谐和品质因数Q。通过执行损耗率1 / Q与所用材料的波长相关吸收系数的曲线拟合，可以分离腔中存在的吸收和辐射损耗机理。通过将该曲线外推至零吸收，可获得腔的辐射损耗率1 / Q rad 。实现了基于光的弹性散射的另一种表征方法。该方法包括对可调谐光源聚焦到腔上时从腔散射的光的光谱进行测量。散射光强度的波长依赖性可以用来类似于光致发光光谱测量的方式来估计腔质量因数Q。该实验方法对于确定当腔体不吸收腔体共振波长的光时可能出现的最大Q值很有用。
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