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首页> 外文学位 >Trapping Effects in Aluminum Gallium Nitride/Gallium Nitride HEMTs for High Frequency Applications : Modeling and Characterization Using Large Signal Network Analyzer and Deep Level Optical Spectroscopy.
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Trapping Effects in Aluminum Gallium Nitride/Gallium Nitride HEMTs for High Frequency Applications : Modeling and Characterization Using Large Signal Network Analyzer and Deep Level Optical Spectroscopy.

机译：用于高频应用的氮化铝镓/氮化镓HEMT中的陷获效应：使用大信号网络分析仪和深层光谱学进行建模和表征。

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摘要

Any defect site existing in the AlGaN/GaN HEMTs can be electrically active during device operation. The activated defect site not only could lead to a degradation in the output characteristics but may introduce additional nonlinearity which seriously downgrades the values of devices for various applications. This motivates us to study the detailed path experimentally and theoretically how an electrically-activated defect site could impact the device performances during practical device operation. In this study, the goal is (1) to give device engineers ideas on how further improvements can be devised to strengthen the existing GaN technology and (2) to provide circuit designers with better understanding on how to use GaN devices more efficiently for the development of reliable commercial GaN products for higher power applications in wireless systems.;Single tone characterization results of AlGaN/GaN HEMTs for Class A operation are presented and compared. A new combined large signal network analyzer / deep level optical spectroscopy system is utilized to study the impact of illumination on the CW large-signal load line and small-signal S-parameters variations to identify the possible energy level of the trapping center responsible for the degradation of the device performance.;A new pulsed-IV pulsed-RF "coldFET" technique is introduced to extract parasitic elements existing in the access regions of AlGaN/GaN HEMTs. The observation of bias-dependence is detailed and a simple semi-physical model is proposed which provides a satisfactory description of experimental results.;The low-frequency noise, an important figure of merit in terms of reliability, is briefly-reviewed. Additive phase noise measurements are presented and the effects of illumination and load impedance are examined. A physical expression is derived and simulated which successfully establishes a relationship between the access resistance and the low-frequency noise and provides a qualitative description of the measurement results.
机译：AlGaN / GaN HEMT中存在的任何缺陷部位在器件运行期间都可能处于电激活状态。激活的缺陷部位不仅可能导致输出特性下降，而且可能引入额外的非线性，从而严重降低器件在各种应用中的价值。这促使我们通过实验和理论研究详细的路径，以了解电激活的缺陷部位如何在实际的器件操作过程中影响器件的性能。在这项研究中，目标是（1）为设备工程师提供有关如何设计进一步改进以增强现有GaN技术的想法，以及（2）使电路设计人员更好地了解如何更有效地使用GaN器件进行开发。可靠的商用GaN产品，用于无线系统中的高功率应用。提出并比较了用于A类操作的AlGaN / GaN HEMT的单音表征结果。利用新的组合式大信号网络分析仪/深层光谱仪系统来研究照明对连续波大信号负载线和小信号S参数变化的影响，从而确定造成诱捕中心的能量水平引入了一种新的脉冲IV脉冲RF“ coldFET”技术，以提取存在于AlGaN / GaN HEMT的存取区中的寄生元件。详细介绍了偏差相关性的观察，并提出了一个简单的半物理模型，该模型为实验结果提供了令人满意的描述。简要回顾了低频噪声，它是可靠性的重要指标。提出了相加噪声测量，并检查了照明和负载阻抗的影响。导出并模拟了一个物理表达式，该表达式成功地建立了访问电阻和低频噪声之间的关系，并提供了对测量结果的定性描述。

著录项

  • 作者

    Yang, Chieh Kai.;

  • 作者单位

    The Ohio State University.;

  • 授予单位 The Ohio State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 127 p.
  • 总页数 127
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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