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Ion beam study of codoped impurity effects on lattice locations of erbium in silicon:erbium.

机译：共掺杂杂质对硅中er的晶格位置的离子束研究。

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摘要

Doping erbium into silicon promises advanced applications in novel solid state lasers and optical amplifiers. The greatest attribute of this approach lies in the intra-4f electronic transition ( 4I13/2 to 4I 15/2) of Er3+ which produces light emission at 1.54 mum, a wavelength falling in the window of minimal loss for silica optical fibers used in optical communications. Co-doping impurities, such as C, N, O and F, into Si:Er has been found to be an effective way for alleviating the problem associated with the forbidden nature of the 4I 13/2--4I15/2 atomic transition. Many research efforts have been devoted to understanding the effects of codopants, but the role played by these co-doped impurities in improving Er optical activities remains to be an issue in debate.; This thesis attempts to address the issue through a systematic investigation of Er lattice locations and their evolution with thermal annealing and in the presence of co-doped impurities. The work, largely based on ion channeling in crystals, shows that Er, if doped in Si via ion implantation, can mainly occupy two lattice locations, i.e., the tetrahedral (T) interstitial site and the hexagonal (H) interstitial site, depending on heat treatments and co-doped impurity contents. Despite their differences, four kinds of codopants (C, N, O and F) studied in the work give rise to strikingly similar effects on the occupation of Er lattice locations: to promote and stabilize Er on the H site as opposed to the case of codopant-free Si:Er. It is proposed in the thesis that interactions among Er, co-doped impurities, and crystal defects are critical for determining Er lattice locations in Si. The work has suggested two configurations with different symmetry (involving T-site or H-site Er) for optically active Er centers in 0 or C co-doped Si:Er for which a large body of optical and electrical data is available in the literature. In addition, the work provides a basis for understanding the great disparity existing in experiments and theories regarding the Er lattice sites in Si.; Finally, the thesis presents ion beam analysis for the determination of the tin to indium ratio in indium-tin oxide (ITO), a material frequently used in fabrication of solid state light emitting devices. In particular, the work demonstrates the advantages of high-resolution Rutherford backscattering (HRRBS) with a magnetic spectrometer for charged particle detection.
机译：将silicon掺杂到硅中有望在新型固态激光器和光放大器中得到先进的应用。这种方法的最大属性在于Er3 +的4f内电子跃迁（4I13 / 2至4I 15/2），该跃迁产生的光发射为1.54微米，该波长落在光学中使用的石英光纤损耗最小的窗口中通讯。已经发现，将诸如C，N，O和F的杂质共掺杂到Si：Er中是减轻与4I 13 / 2--4I15 / 2原子跃迁的禁忌性质有关的问题的有效方法。已经进行了许多研究工作来理解共掺杂剂的作用，但是这些共掺杂杂质在改善Er光学活性方面所起的作用仍是一个争论的问题。本文试图通过系统研究Er晶格的位置及其在热退火和共掺杂杂质存在下的演变来解决这个问题。这项工作主要基于晶体中的离子通道，研究表明，如果通过离子注入将Er掺杂到Si中，Er可能主要占据两个晶格位置，即四面体（T）间隙位和六边形（H）间隙位，具体取决于热处理和共掺杂杂质含量。尽管存在差异，但在工作中研究的四种共掺杂物（C，N，O和F）对Er晶格位置的占用产生了惊人的相似影响：与在H位置促进和稳定Er相对。不含codopant的Si：Er。论文提出，Er，共掺杂杂质和晶体缺陷之间的相互作用对于确定Si在硅中的晶格位置至关重要。这项工作提出了两种具有不同对称性的构型（涉及T部位或H部位的Er），用于0或C共掺杂Si：Er中的光学活性Er中心，文献中提供了大量的光学和电学数据。 。另外，该工作为理解Si中的Er晶格位点的实验和理论中存在的巨大差异提供了基础。最后，本文提出了用于确定铟锡氧化物（ITO）中锡与铟之比的离子束分析方法，ITO是一种经常用于制造固态发光器件的材料。尤其是，这项工作展示了带有磁谱仪的高分辨率卢瑟福背向散射（HRRBS）的优势，可用于带电粒子检测。

著录项

  • 作者

    Ren, Xiaotang.;

  • 作者单位

    State University of New York at Albany.;

  • 授予单位 State University of New York at Albany.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 175 p.
  • 总页数 175
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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