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Dielectric charging in capacitive RF MEMS switches with silicon nitride and silicon dioxide.

机译：电容式RF MEMS中的介电电荷是用氮化硅和二氧化硅来开关的。

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摘要

Capacitive radio frequency (RF) micro-electromechanical (MEMS) switches are among the most promising applications in MEMS systems. They have been introduced in the last 15-20 years as a practical alternative over traditional semiconductor switches. Low-cost RF MEMS switches are prime candidates for replacing the conventional GaAs Field Effect Transistors (FET) and pin diode switches in RF and microwave communication systems, mainly due to their low insertion loss, good isolation, linear characteristic and low power consumption. Unfortunately, their commercialization is currently hindered by reliability problems. The most important problem is charging of the dielectric, causing unpredictable device behavior. The charging of the dielectric has been found to be a complicated process and is currently under intense research. Developing a good analytical model that would describe accumulating of charges in the dielectric and their influence on the device behavior would be the main step to achieving more reliable switches.;This work intends to theoretically and experimentally investigate the dielectric charging effects of capacitive RF MEMS switches with silicon nitride and silicon dioxide as the dielectric layer. For the silicon nitride study, both MEMS switches and MIM capacitors were fabricated, and their charging behaviors were analyzed and compared. Several different dielectric stoichiometries, deposition temperatures, and thicknesses were examined in order to understand the effects of each parameter on the charging mechanisms of the dielectric. The goal was to determine the most favorable deposition conditions to induce minimum dielectric charging in silicon nitride capacitive switches. The switches were measured over a wide temperature range and the temperaturedependent behavior of the dielectric was examined to characterize and study its charging behaviors. For the silicon dioxide MEMS switches, several different actuation mechanisms were systematically analyzed, and their effects on the dielectric charging of the switches were studied. A general model of distributed charge and air gap was adopted and further developed to better explain the charging behavior of MEMS switches. The goal was to provide a deeper insight into the trapping processes in dielectric materials and their corresponding time constants. This will in turn aid in better modeling of charging processes in capacitive RF MEMS switches.
机译：电容式射频（RF）微机电（MEMS）开关是MEMS系统中最有前途的应用之一。在过去的15至20年中，已将它们作为传统半导体开关的替代品进行了介绍。低成本的RF MEMS开关是替换射频和微波通信系统中常规GaAs场效应晶体管（FET）和Pin二极管开关的主要候选者，这主要是由于它们的插入损耗低，隔离度高，线性特性和功耗低。不幸的是，它们的商业化目前受到可靠性问题的阻碍。最重要的问题是电介质的充电，导致无法预测的设备行为。已经发现电介质的充电是一个复杂的过程，并且目前正在深入研究中。建立一个良好的分析模型来描述电介质中电荷的积累及其对器件性能的影响将是实现更可靠开关的主要步骤。这项工作旨在在理论和实验上研究电容性RF MEMS开关的电介质充电效应以氮化硅和二氧化硅作为介电层。为了研究氮化硅，制造了MEMS开关和MIM电容器，并对它们的充电行为进行了分析和比较。为了了解每个参数对电介质充电机制的影响，研究了几种不同的电介质化学计量比，沉积温度和厚度。目的是确定最有利的沉积条件，以在氮化硅电容开关中引起最小的介电电荷。在较宽的温度范围内对开关进行了测量，并检查了电介质的温度相关行为，以表征和研究其充电行为。对于二氧化硅MEMS开关，系统地分析了几种不同的驱动机制，并研究了它们对开关的介电电荷的影响。采用了分布式电荷和气隙的通用模型，并对其进行了进一步开发，以更好地解释MEMS开关的充电行为。目的是更深入地了解介电材料中的俘获过程及其相应的时间常数。反过来，这将有助于更好地建模电容性RF MEMS开关中的充电过程。

著录项

  • 作者

    Tavassolian, Negar.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2011
  • 页码 160 p.
  • 总页数 160
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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