• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Growth and characterization of cadmium sulfide grown by chemical bath deposition for copper indium diselenide photovoltaic thin film solar.
【24h】

Growth and characterization of cadmium sulfide grown by chemical bath deposition for copper indium diselenide photovoltaic thin film solar.

机译：通过化学浴沉积法生长的硫化镉用于铜铟二硒化物光伏薄膜太阳能电池的生长和表征。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Cadmium sulfide polycrystalline thin films were grown in a soda lime glass substrate, by the chemical bath deposition method. The decomposition of thiourea in an alkaline solution of a cadmium chloride on the surface of Cu(In-Ga)Se2 with molybdenum substrate at temperature ranging at 65-85 degrees Celsius and pH of 10-11.5. After the deposition, the layer is characterized for structural, optical and electrical properties. The effects of the of individual reactant concentration, the temperature of the solution and the deposition time and the physical properties are analyzed. A slower rate in deposition was observed to be caused by the overall lower concentration and the increasing of temperature resulted in a faster rate while the long deposition time resulted in a thicker film which appeared dark yellowish or orange in color. SEM, EDS, we performed to determine the properties of the deposited thin films.;The Scanning electron microscope analyzation of the sample with EDS showed that the films were all stoichiometric in atomic ratios grown under all the three different conditions of varying solution temperature, varying the deposition time and varying the concentration of the reactants; keeping the other two parameters constant respectively. The films were all deposited under constant stirring giving out uniform films for all the three parameters. It was difficult to get the resistivity of the films from the hall effect measurements, the four point probe measurements, as there was no current observed to pass through. Future research in this thin film should consider doping the cadmium sulfide to improve conductivity.
机译：通过化学浴沉积法在钠钙玻璃基板上生长硫化镉多晶薄膜。在65-85摄氏度，pH 10-11.5的条件下，带有钼基质的Cu（In-Ga）Se2表面上的氯化镉碱性溶液中的硫脲分解。沉积之后，对该层进行结构，光学和电学性质表征。分析了各个反应物浓度，溶液温度以及沉积时间和物理性质的影响。观察到较慢的沉积速率是由于总体上较低的浓度引起的，并且温度的升高导致较快的速率，而较长的沉积时间导致较厚的膜，其看起来为暗黄色或橙色。我们用SEM，EDS来确定沉积薄膜的性能。用EDS对样品进行扫描电子显微镜分析表明，在三种不同的溶液温度，变化的条件下，薄膜的原子比都是化学计量的沉积时间和反应物浓度的变化；分别保持其他两个参数不变。在恒定搅拌下将所有膜沉积，从而针对所有三个参数给出均匀的膜。由于没有观察到电流通过，因此很难通过霍尔效应测量，四点探针测量来获得薄膜的电阻率。对该薄膜的未来研究应考虑掺杂硫化镉以提高导电性。

著录项

  • 作者

    Musengua, Mpho.;

  • 作者单位

    Howard University.;

  • 授予单位 Howard University.;
  • 学科 Engineering Materials Science.
  • 学位 M.Eng.
  • 年度 2010
  • 页码 81 p.
  • 总页数 81
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号