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首页> 外文学位 >Deposition of epitaxial silicon/silicon-germanium/germanium and novel high-k gate dielectrics using remote plasma chemical vapor deposition.
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Deposition of epitaxial silicon/silicon-germanium/germanium and novel high-k gate dielectrics using remote plasma chemical vapor deposition.

机译：使用远程等离子体化学气相沉积沉积外延硅/硅锗/锗和新型高k栅极电介质。

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摘要

Both high quality epitaxial Si/Si-Ge/Ge films and novel high-k gate dieletrics have been deposited using an upgraded Remote Plasma Chemical Vapor Deposition (RPCVD) system. The upgrade of the RPCVD system consisted of two parts. The first part involved design and installation of a high-density inductively coupled plasma (ICP) source with its peripheral units, in place of an old surface analysis chamber. As a new deposition chamber, this chamber is capable of generating high plasma density with significantly lower ion energy. The second part involved modification of an existing deposition chamber for high-k film deposition. With the final integration of the new RPCVD system, better interfacial quality, lower thermal budget, less contamination and autodoping, and easier process control are expected.; Experiments on epitaxial Si growth were conducted in the new RPCVD chamber in order to characterize growth dependence on different processing parameters. The process was extended to epitaxial Ge/SiGe films on Si that are beyond their Critical Layer Thickness (CLT). High quality epitaxial Si1-x Gex (x > 0.5) and Ge metastable films were achieved with epitaxial thicknesses at least 5 times higher than the corresponding CLT.; High-k gate dielectric growth was performed in another modified deposition chamber. Low temperature RPCVD HfO2 was obtained with excellent physical and electrical characteristics.; Finally, epitaxial Ge/SiGe and novel high-k dielectrics processes were integrated to fabricate MOS capacitors. These capacitors, with excellent structural and electrical properties, significantly increased the potential to fabricate high channel mobility MOSFET devices using RPCVD.
机译：高质量的外延Si / Si-Ge / Ge薄膜和新型的高k栅极介电常数均已使用升级的远程等离子体化学气相沉积（RPCVD）系统进行了沉积。 RPCVD系统的升级包括两个部分。第一部分涉及设计和安装高密度感应耦合等离子体（ICP）源及其外围单元，以代替旧的表面分析室。作为一个新的沉积室，该室能够以低得多的离子能量产生高等离子体密度。第二部分涉及对用于高k膜沉积的现有沉积室的修改。随着新的RPCVD系统的最终集成，有望获得更好的界面质量，更低的热预算，更少的污染和自动掺杂以及更容易的过程控制。为了表征生长对不同工艺参数的依赖性，在新的RPCVD室中进行了外延Si生长的实验。该工艺扩展到了超过其临界层厚度（CLT）的Si上的外延Ge / SiGe膜。获得高质量的外延Si1-x Gex（x> 0.5）和Ge亚稳膜，其外延厚度至少是相应CLT的5倍。在另一个改进的沉积室中进行高k栅极电介质生长。获得具有优异物理和电学特性的低温RPCVD HfO2。最后，外延Ge / SiGe和新颖的高k介电工艺被集成以制造MOS电容器。这些电容器具有出色的结构和电性能，极大地提高了使用RPCVD制造高沟道迁移率MOSFET器件的潜力。

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  • 作者

    Chen, Xiao.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 186 p.
  • 总页数 186
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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