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首页> 外文学位 >Multiphoton internal photoemission induced electric fields studied by second-harmonic generation at the silicon-silicon dioxide interface .
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Multiphoton internal photoemission induced electric fields studied by second-harmonic generation at the silicon-silicon dioxide interface .

机译：在硅-二氧化硅界面处通过二次谐波产生研究了多光子内部光发射感应电场。

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摘要

In this thesis, we develop a novel two-color contactless pump-probe type laser technique for detection of carrier injection, transport (tunneling) and trapping rates at semiconductor/oxide interfaces. This method involves (1) optically pumping electrons into the oxide and (2) probing the resulting interface electric field using time-dependent second-harmonic generation. We report first band-offset measurements, which are based on multiphoton internal-photoemission induced second-harmonic generation and are obtained by this new experimental technique. One- and two-photon internal photoemission thresholds for the Si/SiO2 interface were measured to be ∼4.5 eV and ∼2.25 eV, respectively. This novel method promises to become a valuable experimental tool in determining band offsets in a wide variety of semiconductor interfaces. We also report on the first application of electric-field-induced second-harmonic generation for studies of damage enhanced electron transport, across thin oxides in X-ray irradiated Si/SiO2 samples. Measured electron transport rates across an irradiated oxide are substantially higher in comparison to unirradiated oxides. This effect is attributed to the presence of X-ray irradiation induced defects that act as intermediate trapping sites facilitating enhanced electron tunneling through the oxide. This thesis will discuss the possible nature of the radiation induced trapping sites.
机译：在本文中，我们开发了一种新颖的两色非接触式泵浦探针型激光技术，用于检测半导体/氧化物界面上的载流子注入，传输（隧穿）和陷阱速率。该方法涉及（1）将电子光学泵浦到氧化物中，以及（2）使用与时间有关的二次谐波产生来探测所得的界面电场。我们报告了基于多光子内部光发射引起的第二谐波产生并通过这种新的实验技术获得的第一带偏移测量。 Si / SiO 2 界面的一光子内部光发射阈值和两光子内部光发射阈值分别为约4.5 eV和约2.25 eV。这种新颖的方法有望成为确定各种半导体接口中的带偏移的有价值的实验工具。我们还报道了电场诱导的第二谐波产生在研究增强的电子传输方面的首次应用，该电子在X射线辐照的Si / SiO 2 样品中穿过薄氧化物。与未辐照氧化物相比，跨辐照氧化物测量的电子传输速率要高得多。这种作用归因于X射线辐照引起的缺陷的存在，这些缺陷充当中间俘获位点，促进了通过氧化物的增强电子隧穿。本文将讨论辐射诱捕位点的可能性质。

著录项

  • 作者

    Marka, Zsuzsanna Agnes.;

  • 作者单位

    Vanderbilt University.;

  • 授予单位 Vanderbilt University.;
  • 学科 Physics Condensed Matter.; Physics Optics.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 115 p.
  • 总页数 115
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学;
  • 关键词

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