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首页> 外文学位 >Process development, material analysis, and electrical characterization of ultra thin hafnium silicate films for alternative gate dielectric application.
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Process development, material analysis, and electrical characterization of ultra thin hafnium silicate films for alternative gate dielectric application.

机译：用于替代栅极电介质应用的超薄硅酸ha薄膜的工艺开发，材料分析和电学表征。

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摘要

As aggressive scaling of the Metal-Oxide-Semiconductor (MOS) integrated circuit continues, the required equivalent oxide thickness (EOT) for 100nm technology and beyond is expected to be less than 12Å. In this ultra-thin film regime, SiO2 or oxynitrides face serious limitations due to direct tunneling currents, dopant penetration, and reliability concerns. HfO 2, ZrO2 and their silicates are being considered as potential candidates for replacing conventional oxides or oxynitrides owing to their thermodynamic stability in contact with silicon, high dielectric constants, chemical stability at high temperatures, etc. Although HfO 2 has shown promising electrical characteristics such as low EOT and leakage, low crystallization temperature, poor interface quality, uncontrolled interfacial layer growth, and reliability issues are some of the concerns with it. HfSixOy has been sought as a solution to alleviate some of these problems.; Hafnium silicate films were deposited by co-sputtering of hafnium and silicon in argon ambient followed by annealing. Hafnium silicates with more than 13% Si remains amorphous even after 1000°C anneals. They also show better thermal stability characteristics than HfO2 at all compositions studied. They have been shown to be compatible with poly and TaN gate electrodes. Through process optimization, Hf-silicate films have been scaled down to 10.3Å, with leakage in the order of 1mA/cm2 at −1.5V. Low dispersion, low stress-induced leakage currents, high effective breakdown fields, and large lifetimes were obtained.; Good thermal stability with polysilicon and TaN electrodes were also obtained. MOS transistors have been demonstrated with poly and TaN electrodes, showing excellent subthreshold and drive current characteristics. The effects of NH3 pre-treatment on the electrical and reliability characteristics were also investigated. While thermal stability, EOT, leakage and breakdown were improved significantly, threshold voltage shifts, high hysteresis, poor MOSFET and poor reliability characteristics were obtained for the NH 3 pre-treated samples.; In conclusion, promising electrical and material characteristics were obtained for Hf-silicates indicating that they are attractive candidates for alternative gate dielectric applications.
机译：随着金属氧化物半导体（MOS）集成电路规模的不断扩大，对于100nm及更高工艺，所需的等效氧化物厚度（EOT）预计将小于12Å。在这种超薄膜状态下，由于直接隧穿电流，掺杂剂渗透和可靠性问题，SiO 2 或氮氧化物面临严重的局限。 HfO 2 ，ZrO 2 及其硅酸盐由于与硅接触具有热力学稳定性，因此被认为是替代常规氧化物或氮氧化物的潜在候选物。 ，高介电常数，高温下的化学稳定性等。尽管HfO 2 具有良好的电学特性，如低EOT和泄漏，低结晶温度，不良的界面质量，不受控制的界面层生长以及可靠性问题是与此有关的一些问题。已经寻求HfSi x O y 作为减轻这些问题的一种解决方案。通过在氩气环境中共同溅射ha和硅来沉积硅酸deposited薄膜，然后进行退火。 Si含量超过13％的硅酸即使在1000°C退火后仍保持非晶态。在所有研究的成分中，它们还显示出比HfO 2 更好的热稳定性。已经证明它们与多晶硅和TaN栅电极兼容。通过工艺优化，Hf-硅酸盐薄膜已缩小至10.3Å，在-1.5V时的泄漏量约为1mA / cm 2 。获得低分散，低应力引起的漏电流，高有效击穿场和长寿命。还获得了多晶硅和TaN电极的良好热稳定性。 MOS晶体管已被证明具有多晶硅电极和TaN电极，具有出色的亚阈值和驱动电流特性。还研究了NH 3 预处理对电气和可靠性特性的影响。 NH 3 预处理样品的热稳定性，EOT，泄漏和击穿性能得到显着改善，但阈值电压漂移，高滞后，MOSFET差和可靠性差。总之，获得了Hf硅酸盐的有希望的电学和材料特性，表明它们是替代栅极电介质应用的有吸引力的候选材料。

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  • 作者

    Gopalan, Sundararaman.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 176 p.
  • 总页数 176
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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