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首页> 外文学位 >A study of particle formation and transport during thermal chemical vapor deposition (CVD) of silicon dioxide films and high-density plasma CVD of poly silicon films.
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A study of particle formation and transport during thermal chemical vapor deposition (CVD) of silicon dioxide films and high-density plasma CVD of poly silicon films.

机译：对二氧化硅膜的热化学气相沉积（CVD）和多晶硅膜的高密度等离子体CVD过程中颗粒形成和传输的研究。

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In this work, particle nucleation and growth during thermal chemical vapor deposition (CVD) of SiO2 films and inductively-coupled plasma CVD of poly-Si films are investigated using particle beam mass spectrometer (PBMS) and transmission electron microscopy (TEM) measurements. To improve the ease of PBMS operation, a new electron gun with thoria-coated iridium filaments, which has longer lifetime (∼3 months) than the previous electron gun with zirconium filament (∼2 hours), was adopted. Also, a new design criterion for the deflector was established to ensure that the deflected particle beam would reach the Faraday detector. For thermal CVD of SiO2 films, particle size distributions were measured using the PBMS at pressures and temperatures ranging from 0.5 to 2.0 torr and 200 to 800°C, using an O2/SiH4 ratio of 20. We found that within this parameter space, there are three different particle formation regions (explosion, unsteady, and steady) and a particle free region. The measured particle size distributions in the steady region are bimodal with one mode around 7 nm in diameter and the other around 20 nm, which is in reasonable agreement with TEM measurements. These results are consistent with predictions of numerical model, which was developed by Song-Moon Suh to simulate particle nucleation and growth in this system. It is also found that there is a correlation between particle concentration and film surface morphology, dielectric constant, and current-voltage characteristics of the film. During inductively-coupled plasma CVD of poly-Si films, PBMS measurements at 200 mtorr confirmed that most of the particles are trapped inside the plasma because they are negatively charged. At 10 and 12 mtorr, TEM measurements were performed and the results show that particle sizes are highly uniform with relative standard deviations much less than 0.2. Furthermore, the surface morphology of particles changed from smooth to rough as particles grew. A similar evolution in the surface structures of thin films grown by CVD has been reported. These observations suggest that particle growth occurs by surface deposition of molecules (or ions). It was found that particle concentrations are approximately constant, which supports particle growth by surface deposition, not by coagulation.
机译：在这项工作中，使用粒子束质谱仪（PBMS）研究了SiO 2 膜的热化学气相沉积（CVD）和多晶硅膜的电感耦合等离子体CVD过程中的颗粒成核和生长。电子显微镜（TEM）测量。为了提高PBMS操作的便利性，采用了一种新的带有氧化ria涂层的铱丝的电子枪，该电子枪的寿命（〜3个月）比以前的带有锆丝的电子枪（〜2小时）更长。另外，为偏转器建立了新的设计标准，以确保偏转的粒子束将到达法拉第探测器。对于SiO 2 薄膜的热CVD，使用PBMS在0.5至2.0托和200至800°C的压力和温度下使用O 2 / SiH 4 的比率为20。我们发现，在此参数空间内，存在三个不同的粒子形成区域（爆炸，不稳定和稳定）和无粒子区域。在稳定区域中测得的粒度分布是双峰的，其中一种模式的直径约为7 nm，另一种模式的直径约为20 nm，这与TEM测量合理地吻合。这些结果与Song-Moon Suh开发的用于模拟该系统中颗粒成核和生长的数值模型的预测一致。还发现颗粒浓度与膜表面形态，介电常数和膜的电流-电压特性之间存在相关性。在多晶硅薄膜的电感耦合等离子体CVD期间，PBMS在200毫托下的测量结果证实，大多数颗粒都被带负电，因此被困在等离子体内部。在10和12毫托下进行TEM测量，结果表明粒径非常均匀，相对标准偏差远小于0.2。此外，随着颗粒的生长，颗粒的表面形态从光滑变为粗糙。据报道，通过CVD生长的薄膜的表面结构也发生了类似的变化。这些观察结果表明，粒子的生长是通过分子（或离子）的表面沉积而发生的。发现颗粒浓度是近似恒定的，其通过表面沉积而不是通过凝结来支持颗粒生长。

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