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A UHV variable temperature STM and its application to the study of high-T(C) superconductors and carbon nanotubes.

机译:特高压变温STM及其在高T(C)超导体和碳纳米管研究中的应用。

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摘要

The first part of this dissertation describes brief theoretical background for scanning tunneling microscopy (STM), single electron tunneling, and Coulomb blockade phenomena. The second part addresses issues on the design and construction of Ultra High Vacuum Low Temperature Scanning Tunneling Microscope (UHV LTSTM) and also its operation, the third part describes topographic, spectroscopic data obtained on high-TC superconductors and HOPG with carbon nanotube (CNT) tips with hitherto made UHV LTSTM system. The fourth part discusses on the possibility of new microscopy using CNT tip's remarkable I-V characteristic.; Our UHV LTSTM can reach from room temperature down to ∼8K. To control the STM head, we used W. A. Technology's TOPS® system and its software. STM experiments were carried out using double etched W wire tips, and also carbon nanotubes grown on sharpened W wires. SEM images of these nanotube tips show bundles of SWNT or MWNT structures. Atomic-scale STM images on HOPG and 3 nm structural modulations on Bi2Sr 2CaCu2O8+x crystals were observed with these nanotube tips. Rectifying I-V characteristics with a threshold voltage of ∼0.7 V were observed with a nanotube tip and a Bi2Sr 2CaCu2O8+x sample at 84K. This unexpected characteristics were explained in terms of double barrier tunneling. Quantized differential conductance peaks were also observed reproducibly with different carbon nanotube tips and different sample at different temperature from 13K to 84K, with peak to peak ΔV as large as few 100 mV, which suggests Coulomb blockade phenomena. Performing constant imaging tunneling spectroscopy (CITS) with these CNT tips with single electron box behavior, a new possibility of microscopy was discussed in virtue of Fourier transform.
机译:本文的第一部分介绍了扫描隧道显微镜(STM),单电子隧道和库仑阻塞现象的简要理论背景。第二部分介绍了超高真空低温扫描隧道显微镜(UHV LTSTM)的设计和构造问题,以及它的操作,第三部分介绍了在高T C 超导体上获得的地形图谱数据以及迄今为止制造的UHV LTSTM系统的碳纳米管(CNT)尖端HOPG。第四部分讨论了使用CNT尖端的显着的 I-V 特性进行新显微镜检查的可能性。我们的UHV LTSTM可以从室温降至约8K。为了控制STM头,我们使用了W.A. Technology的TOPS ®系统及其软件。 STM实验是使用双蚀刻W线尖端以及在锐化的W线上生长的碳纳米管进行的。这些纳米管尖端的SEM图像显示出SWNT或MWNT结构的束。 HOPG上的原子级STM图像和Bi 2 Sr 2 CaCu 2 O 8 + x 2 Sr 2 CaCu 2 <观察到阈值电压约为0.7 V的 IV 特性。 / sub> O 8 + x 以84K采样。用双势垒隧穿解释了这种意外的特性。在从13K到84K的不同温度下,使用不同的碳纳米管尖端和不同的样品,还可以重现观察到的定量电导峰,其峰间ΔV高达100 mV,这表明存在库仑阻塞现象。用这些具有单个电子盒行为的CNT尖端执行恒定成像隧道光谱(CITS),借助傅里叶变换讨论了一种新的显微镜可能性。

著录项

  • 作者

    Lee, Jinho.;

  • 作者单位

    The University of Texas at Austin.;

  • 授予单位 The University of Texas at Austin.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2002
  • 页码 96 p.
  • 总页数 96
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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