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首页> 外文学位 >Crystalline silicon thin films for thin-film transistor applications via excimer laser irradiation.
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Crystalline silicon thin films for thin-film transistor applications via excimer laser irradiation.

机译：通过准分子激光辐照用于薄膜晶体管的晶体硅薄膜。

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摘要

This dissertation documents the demonstration, development, and characterization of a new excimer laser crystallization process called sequential lateral solidification (SLS). The SLS process can provide thin-film materials with previously unavailable microstructures, such as location-controlled single-crystal islands and other low-defect-density engineered crystalline microstructures in thin silicon films on substrates that cannot withstand high-temperature processing. These materials are well-suited for making high-performance thin-film transistor (TFT) devices, and have important applications in several TFT-based technologies, such as active-matrix liquid-crystal displays (AMLCDs) and active-matrix organic light-emitting displays (AMOLEDs).; The concept for the SLS process originated from a previous study of the mechanisms of excimer-laser-induced phase transformations in thin silicon films, and is based on the superlateral growth (SLG) phenomenon. After a brief review of other crystallization technologies, the conceptual framework for the SLS process is introduced, implementation schemes and options are discussed, and the equipment that was used to conduct the process is presented. Initial efforts for demonstrating the viability of the process are discussed; the results from a number of different experiments that demonstrate the process are presented. A couple of different microstructures predicted by the model are verified by these results, including the directionally solidified columnar microstructure and the single-crystal island microstructure. In connection with these experiments, the factors that are relevant to the process are discussed, and the conditions for successful execution of the process are given.; The external parameter space of the SLS process was characterized in a systematic fashion using two different sets of equipment. The effects of the relevant experimental external parameters—film configuration, beam-patterning, energy density, and between-pulse translation distance—on the process and the resulting microstructure are presented.; A quantitative mathematical model of the process was developed, based on the SLG model, and was used to study the effects of stochastic variables such as the pulse-to-pulse laser beam energy fluctuation. Two approaches were taken: a Monte Carlo simulation, and an analytical treatment based on probability distributions. The predictions of the model are discussed, and are found to match the results of the parametric experiments.
机译：本文记录了一种称为顺序横向凝固（SLS）的新型准分子激光结晶工艺的演示，开发和表征。 SLS工艺可以为薄膜材料提供先前无法获得的微结构，例如无法承受高温处理的基板上的硅膜中的位置控制的单晶岛和其他低缺陷密度工程晶体微结构。这些材料非常适合用于制造高性能薄膜晶体管（TFT）器件，并且在几种基于TFT的技术中具有重要的应用，例如有源矩阵液晶显示器（AMLCD）和有源矩阵有机光-发射显示器（AMOLED）。 SLS过程的概念源自对硅薄膜中受激准分子激光诱导的相变机制的先前研究，并且基于超边生长（SLG）现象。在简要回顾了其他结晶技术之后，介绍了SLS过程的概念框架，讨论了实现方案和选项，并介绍了用于进行该过程的设备。讨论了证明该过程可行性的初步工作；给出了许多不同的实验结果来证明这一过程。这些结果验证了模型预测的几个不同的微观结构，包括定向凝固的柱状微观结构和单晶岛微观结构。结合这些实验，讨论了与过程相关的因素，并给出了成功执行过程的条件。使用两组不同的设备，系统地描述了SLS过程的外部参数空间。提出了相关实验外部参数（薄膜配置，束图，能量密度和脉冲间平移距离）对工艺和所得微观结构的影响。在SLG模型的基础上，建立了该过程的定量数学模型，并用于研究随机变量（如脉冲间激光束能量波动）的影响。采取了两种方法：蒙特卡洛模拟和基于概率分布的分析处理。讨论了模型的预测，并发现该预测与参数实验的结果相匹配。

著录项

  • 作者

    Sposili, Robert Stephen.;

  • 作者单位

    Columbia University.;

  • 授予单位 Columbia University.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.; Physics Condensed Matter.
  • 学位 Eng.Sc.D.
  • 年度 2001
  • 页码 p.6662
  • 总页数 341
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

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