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首页> 外文学位 >Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes.
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Intrinsic and metal-doped gallium oxide based high-temperature oxygen sensors for combustion processes.

机译：基于内在和金属掺杂的氧化镓基高温氧气传感器，用于燃烧过程。

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摘要

Currently, there is enormous interest in research, development and optimization of the combustion processes for energy harvesting. Recent statistical and economic analyses estimated that by improving the coal-based firing/combustion processes in the power plants, savings up to ~;Motivated by the aforementioned technological challenges, the present work was focused on high-temperature (≥700 °C) oxygen sensors for application in power generation systems. The objective of the present work is to investigate nanostructured gallium oxide (2O3) based sensors for oxygen sensing, where we propose to conduct in-depth exploration of the role of refractory metal (tungsten, W, in this case) doping into 2O 3 to enhance the sensitivity, selectivity, stability ("3S" criteria) and reliability of such sensors while keeping cost economical. Tungsten (W) doped gallium oxide (2O3) thin films were deposited via rf-magnetron co-sputtering of W-metal and Ga2O3-ceramic targets. Films were produced by varying the sputtering power applied to the W-target in order to achieve variable W content into 2O3 films while substrate temperature was kept constant at 500 °C. Chemical composition, chemical valence states, microstructure and crystal structure of as-grown and post-annealed W-doped 2O3 films were evaluated as a function of W-content. The structural analyses indicate the formation of monoclinic beta-phase 2O3 in as-grown W-doped 2O3 films for all W-content. Thermally induced secondary phase (W-oxide) formation was observed after the annealing process. Chemical analysis demonstrates the increasing W atomic percentage in the films with increasing sputtering power, whereas the main metallic ionic species for the films are W6+ and Ga3+. Evidence of W interdiffusion due to the annealing process is presented, and the mechanism of diffusion is discussed. Surface morphology of the films is also discussed, and the transition to mesoporous surface is observed after annealing. Finally, the oxygen sensor performance evaluation demonstrated that the W-incorporated 2O3 exhibits improved response time compared to intrinsic 2O3 based oxygen sensors.
机译：当前，对用于能量收集的燃烧过程的研究，开发和优化引起了极大的兴趣。最近的统计和经济分析估计，通过改善发电厂的煤基燃烧/燃烧过程，可节省多达〜；由于上述技术挑战，目前的工作重点是高温（≥700°C）氧气用于发电系统的传感器。本工作的目的是研究基于纳米结构的氧化镓（2O3）的氧传感器，我们建议深入研究掺杂到2O 3到3O中的难熔金属（在这种情况下为钨，钨）的作用。提高此类传感器的灵敏度，选择性，稳定性（“ 3S”标准）和可靠性，同时保持成本节约。掺杂钨（W）的氧化镓（2O3）薄膜是通过射频磁控管共溅射W-金属靶和Ga2O3-陶瓷靶而沉积的。通过改变施加到W靶上的溅射功率来生产薄膜，以使2O3薄膜中的W含量可变，同时衬底温度保持恒定在500°C。评价了随生长和退火后的W掺杂2O3薄膜的化学成分，化学价态，微观结构和晶体结构与W含量的关系。结构分析表明，在所有W含量的W掺杂W掺杂2O3薄膜中均形成了单斜晶β相2O3。在退火过程之后，观察到热诱导的第二相（W-氧化物）的形成。化学分析表明，随着溅射功率的增加，薄膜中的W原子百分比增加，而薄膜的主要金属离子种类为W6 +和Ga3 +。给出了由于退火过程引起的W相互扩散的证据，并讨论了扩散机理。还讨论了膜的表面形态，并在退火后观察到向中孔表面的转变。最后，氧传感器性能评估表明，与W结合的2O3与基于内在的2O3的氧传感器相比，响应时间有所改善。

著录项

  • 作者

    Rubio, Ernesto Javier.;

  • 作者单位

    The University of Texas at El Paso.;

  • 授予单位 The University of Texas at El Paso.;
  • 学科 Nanoscience.;Materials science.
  • 学位 Ph.D.
  • 年度 2016
  • 页码 152 p.
  • 总页数 152
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 语言学;
  • 关键词

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