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Luminescence and material characterization of co-deposited tungsten doped zinc oxide phosphor.

机译:共沉积钨掺杂的氧化锌磷光体的发光和材料表征。

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In the area of developing low voltage phosphors for field-emission displays, research has gained momentum over the last few decades. Many II-VI compound semiconductors with luminescence at various wavelengths in the visible spectrum make good candidates for display device applications, but do not meet the low excitation voltage requirement, An investigation conducted at Texas A&M University to achieve blue luminescence from zinc oxide showed that tungsten doped zinc oxide (W: ZnO) emits blue light with excitation voltage as low as 75 V. However, the source of this luminescence behavior was not identified. The research conducted to study this phosphor required fabrication of the phosphor under varying conditions. Using co-deposition technique, films containing varying concentration of tungsten were annealed under varying levels of temperature, time and argon to oxygen concentrations. Luminescence measurements performed included determining emission wavelength, brightness and color coordinates. Material analysis of the phosphor was also performed to determine the source luminescence. Using X-ray diffraction and infrared spectrometer, formation of zinc tungstate in the phosphor was determined to be the source of luminescence near 493 nm.
机译:在开发用于场发射显示器的低压磷光体的领域中,在过去的几十年中,研究得到了发展。许多在可见光谱中具有各种波长发光的II-VI化合物半导体是显示设备应用的良好候选者,但不能满足低激励电压的要求。德州农工大学进行了一项研究,以实现氧化锌的蓝色发光研究表明,钨掺杂的氧化锌(W:ZnO)发出的蓝光激发电压低至75V。但是,这种发光行为的来源尚未确定。为研究这种荧光粉而进行的研究要求在不同条件下制造荧光粉。使用共沉积技术,将含有不同浓度钨的薄膜在不同水平的温度,时间和氩气下退火至氧气浓度。进行的发光测量包括确定发射波长,亮度和颜色坐标。还对磷光体进行了材料分析,以确定光源的发光。使用X射线衍射和红外光谱仪,确定磷光体中钨酸锌的形成是493 nm附近的发光源。

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