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Characterization and improvement of temperature and critical dimension uniformity in a microlithography cluster: An analytical and experimental study.

机译：微光刻集群中温度和临界尺寸均匀性的表征和改进：一项分析和实验研究。

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摘要

The microlithography process is critical to the successful manufacture of integrated circuits. Control of the critical dimension (CD) of a device is paramount to producing devices that meet design specifications. The work discussed in this dissertation is the characterization and improvement of the CD uniformity contribution from the photoresist processing equipment, specifically the critical post exposure bake (PEB) and chill processes. An exhaustive study that combined state-of-the art simulations using the FiDAP finite element computational fluid dynamics (CFD) package, theoretical calculations and analyses, and experimental methods was used to quantitatively predict the main parameters that influence the temperature and CD nonuniformity of the wafer during proximity baking.;As the microlithography industry moves toward smaller features, specifications on temperature uniformity of the bake plates are expected to become more stringent. A detailed thermal analysis was conducted on the 200 and 300 mm POLARIS bake stations, manufactured by FSI International Incorporated. Both the transient (during temperature ramp-up of the wafer) and steady state (wafer temperature near the setpoint) temperature uniformity were analyzed. The key observation from this study was that the temperature uniformity of the wafer in proximity mode depends on a number of parameters in addition to the temperature uniformity across the surface of the bake plate. The leading contributors to temperature nonuniformity were the heater power distribution, the thickness variation in the proximity air gap, and the asymmetric heat losses due to airflow around the bake chamber and poor insulation of the bake plate and lid.;Several experimental studies were performed to characterize and reduce the CD nonuniformity contribution from the PEB and chill processes (using chemically amplified photoresists on 250 and 180 nm lines and spaces). The factors analyzed included: process time, setpoint temperature, temperature uniformity, and bake to chill transfer time. The CD work described here accomplished two important tasks. First, the relative significance of the transient and steady state temperature uniformity was characterized. Second, the setpoint temperature and temperature uniformity parameters were separated and studied individually. Based on this study, several practical design changes were implemented to mitigate the influence of the parameters that significantly reduced temperature and CD uniformity.
机译：微光刻工艺对集成电路的成功制造至关重要。控制设备的关键尺寸（CD）对于生产符合设计规范的设备至关重要。本文讨论的工作是表征和改善光刻胶加工设备对CD均匀性的贡献，特别是关键的后曝光烘烤（PEB）和冷却工艺。详尽的研究结合了使用FiDAP有限元计算流体动力学（CFD）程序包的最新模拟，理论计算和分析以及实验方法，用于定量预测影响温度和CD不均匀性的主要参数。随着微光刻行业朝着更小的特征发展，对烘烤板的温度均匀性的规格有望变得更加严格。在由FSI International Incorporated制造的200和300 mm POLARIS烘烤台上进行了详细的热分析。分析了瞬态（晶片温度上升期间）和稳态（晶片温度接近设定点）温度均匀性。这项研究的主要观察结果是，在接近模式下晶片的温度均匀性还取决于许多参数，除了整个烘烤板表面的温度均匀性之外。导致温度不均匀的主要因素是加热器功率分布，邻近气隙的厚度变化以及由于烘烤室周围的气流以及烘烤板和盖子的绝缘不良导致的不对称热损失。表征并减少PEB和冷却过程（在250和180 nm的线条和空间上使用化学放大的光刻胶）引起的CD不均匀性。分析的因素包括：处理时间，设定点温度，温度均匀性以及烘烤到冷却的转移时间。此处描述的CD工作完成了两项重要任务。首先，表征了瞬态和稳态温度均匀性的相对重要性。其次，分离设定温度和温度均匀性参数并分别进行研究。根据这项研究，进行了一些实际的设计更改，以减轻那些显着降低温度和CD均匀性的参数的影响。

著录项

  • 作者

    Kozman, Austin Jon.;

  • 作者单位

    The University of Texas at Arlington.;

  • 授予单位 The University of Texas at Arlington.;
  • 学科 Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 238 p.
  • 总页数 238
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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