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2nd-order, surface-emitting distributed feedback diode lasers.

机译：二阶表面发射分布式反馈二极管激光器。

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摘要

Surface-emitting lasers have become very important for communications and other applications because of their low cost and high reliability. Currently the vertical cavity surface-emitting laser (VCSEL) is the surface-emitter of choice. However, VCSELs are limited to low powers (5 mW CW) and short wavelengths (1300 nm). This dissertation presents theoretical and experimental work on second-order, surface-emitting distributed feedback lasers, which have the potential of providing ∼100 mW pulsed power at wavelengths up to and including 1550 nm. We show that a thin p-cladding InGaAs/InGaP/GaAs laser structure with a second-order Au/air grating (70% duty cycle) and asymmetrically coated (30%, 5% reflectivity) cleaved facets emits in a diffraction-limited single lobe in a direction virtually normal to the chip surface. The device operates with an external differential quantum efficiency, ηD, of around 20% when the phase of the uncoated facet with respect to the grating is near π/4 (i.e. in the 45*–65* range). Single-lobe emission normal to the chip surface (i.e. symmetric-mode lasing) can then be obtained from devices without cleaved mirrors by introducing a phase shift close to π/2 in the center of the second-order grating. For the structure used, a phase shift of 90°–130° in the center of 1 mm-long gratings is found to provide single-lobe surface emission with ηD values as high as 22%. Even higher values (e.g. 35%) Of ηD can be obtained by increasing the grating-section length, but the near-field becomes more non-uniform, making the device susceptible to multimode operation as a result of GSHB. However, we also show here that one can simultaneously achieve high values Of ηD and high uniformity of the near-field by placing 1st-order DBR reflectors at the ends of a 2nd-order surface-emitting DFB. This result has important implications for the development of high power surface-emitting DFB lasers, which can potentially provide 100mW CW (single-stripe devices) and >1 W CW (array surface-emitters) in a stable single-mode, single-lobed beam pattern.
机译：表面发射激光器由于其低成本和高可靠性而在通信和其他应用中变得非常重要。当前，垂直腔表面发射激光器（VCSEL）是选择的表面发射器。但是，VCSEL限于低功率（<5 mW CW）和短波长（<1300 nm）。本文介绍了二阶表面发射分布式反馈激光器的理论和实验工作，该激光器有可能在高达1550 nm的波长下提供约100 mW的脉冲功率。我们表明，具有二阶Au /空气光栅（占空比为70％）和不对称涂层（反射率分别为30％，5％）的薄p覆层InGaAs / InGaP / GaAs激光结构在受衍射限制的单个面中发射沿实际上垂直于芯片表面的方向突出。当未镀膜的小面相对于光栅的相位接近π/ 4时（即45 * –65 *），该器件的外部差分量子效率η D 约为20％。范围）。然后，可以通过在二阶光栅的中心引入接近π/ 2的相移，从不带分裂镜的器件中获得垂直于芯片表面的单瓣发射（即对称模式激射）。对于所使用的结构，发现在1毫米长的光栅中心发生90°–130°的相移，可提供单瓣表面发射，其η值高达22％。通过增加光栅截面的长度，甚至可以得到更高的η D 值（例如35％），但是近场变得更加不均匀，从而使得该设备容易受到多模操作的影响GSHB。但是，我们在这里还表明，通过将1 st 阶DBR反射器放置在η D 的高值和近场的高均匀性，可以同时实现2 阶表面发射DFB。这一结果对开发高功率表面发射DFB激光器具有重要意义，该激光器可以在稳定的单模，单瓣下提供100mW CW（单条带器件）和> 1 W CW（阵列表面发射器）。光束图案。

著录项

  • 作者

    Lopez, James Gerard.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 124 p.
  • 总页数 124
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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