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首页> 外文学位 >Oxide reliability improvement through nitridation technology in VLSI CMOS and nonvolatile memory devices.
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Oxide reliability improvement through nitridation technology in VLSI CMOS and nonvolatile memory devices.

机译：通过VLSI CMOS和非易失性存储器件中的氮化技术提高了氧化物的可靠性。

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摘要

Gate oxide and tunneling oxide used in CMOS and Non-Volatile Memories (NVM) are of significant importance in modern day and future Very-Large-Scale-Integrated (VLSI) devices. As devices are continuously being scaled down to the deep sub-micron regime to achieve higher circuit density and better performance, oxide reliability becomes a limiting factor for device scaling. Boron penetration in dual gate CMOS process also poses a serious limit on future device scaling. Nitridation technology is investigated as a novel method to improve the oxide reliability for both CMOS and non-volatile memory devices. Elimination of boron penetration in p+ doped PMOSFETs is also achieved by nitrogen incorporation in gate oxide. Present understanding of gate oxide reliability issues and device characteristics under different stress conditions are discussed. N2O annealed oxides and post polysilicon gate nitridation techniques are investigated as viable methods to significantly improve device reliability. The feasibility of the nitridation technology is supported by both experimental data and theoretical analysis.
机译：CMOS和非易失性存储器（NVM）中使用的栅极氧化物和隧穿氧化物在现代和未来的超大规模集成（VLSI）器件中具有重要意义。随着器件不断按比例缩小至深亚微米范围，以实现更高的电路密度和更好的性能，氧化物可靠性成为器件缩放的限制因素。双栅CMOS工艺中的硼渗透也严重限制了未来器件的扩展。研究了氮化技术，以提高CMOS和非易失性存储器件的氧化物可靠性。通过在栅极氧化物中掺入氮，也可以消除p + 掺杂PMOSFET中的硼渗透。讨论了目前对不同应力条件下栅极氧化物可靠性问题和器件特性的理解。研究了N 2 O退火氧化物和多晶硅栅后氮化技术，是显着提高器件可靠性的可行方法。实验数据和理论分析都支持氮化技术的可行性。

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  • 作者

    Zhou, Zhixu.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 141 p.
  • 总页数 141
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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