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Characterization of thin film semiconductors by scanning probe microscopy and tunneling spectroscopy.

机译：通过扫描探针显微镜和隧道光谱法表征薄膜半导体。

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We have used scanning tunneling microscopy, atomic force microscopy, tunneling spectroscopy, resonance Raman spectroscopy and electrochemistry to study the electrosynthesis of II-VI compound semiconductors with special emphasis on ZnS, CdS, and HgS. This dissertation will focus mainly on the electrochemical and scanning probe (STM and AFM) applications to these compounds, in addition to novel materials such as CoSb. We hope to understand the structural, as well optical properties of these materials. Finally, we hope to develop a recipe for the electrosynthesis of high quality semiconductor films.; In Chapter 2, we report an electrochemical, scanning probe microscopic and Raman spectroscopic investigation of thin US films grown by electrochemical atomic layer epitaxy (EC-ALE) aimed at understanding the role played by the order of deposition on film quality.; In Chapter 3, we report a study of electrosynthesized CdS-HgS heterojunctions using scanning tunneling microscopy (STM), photoluminescence spectroscopy (PL), and electrochemistry. US thin films were grown by electrochemical atomic layer epitaxy onto Au(111) substrates and were terminated with a single HgS monolayer.; In Chapter 4, the structure and chemical composition of electrosynthesized ZnS thin films on Au(111) substrates grown by alternating underpotential deposition and oxidative adsorption cycles of S and Zn from solution precursors was studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS).; In Chapter 5, conditions for the growth of. stable mercury sulfide (HgS) monolayers on Au(111) surfaces using electrochemical atomic layer epitaxy have been investigated. HgS thin films were characterized by X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM).; Chapter 6: This chapter describes the use of resonance Raman spectroscopy to characterize thin films of the II-VI compound semiconductors electrosynthesized on metal surfaces. We describe how resonance Raman experiments can provide information; about both the electronic band structure of a material as well as time dependent phenomena such as charge carrier trapping.; In Chapter 7, the use of electrochemical atomic layer epitaxy for the electrosynthesis of high quality thin films of thermoelectric materials is studied. Specifically, the use of sequential underpotential deposition cycles of Sb and Co for the production of CoSb phases on Au substrates is investigated.
机译：我们已经使用扫描隧道显微镜，原子力显微镜，隧道光谱，共振拉曼光谱和电化学来研究II-VI化合物半导体的电合成，特别是ZnS，CdS和HgS。除了新型材料，例如CoSb，本文还将主要研究这些化合物的电化学和扫描探针（STM和AFM）应用。我们希望了解这些材料的结构以及光学性能。最后，我们希望为高品质半导体薄膜的电合成开发一个配方。在第二章中，我们报告了通过电化学原子层外延（EC-ALE）生长的美国薄膜的电化学，扫描探针显微镜和拉曼光谱研究，目的是了解沉积顺序对薄膜质量的影响。在第3章中，我们报告了使用扫描隧道显微镜（STM），光致发光光谱（PL）和电化学方法对电合成CdS-HgS异质结的研究。 US薄膜通过电化学原子层外延生长在Au（111）衬底上，并以单个HgS单层终止。在第4章中，通过扫描隧道显微镜（STM）和X射线光电子研究了Au（111）衬底上的电合成ZnS薄膜的结构和化学组成，该薄膜通过交替的低电位沉积和溶液中前驱物对S和Zn的氧化吸附循环而生长。光谱（XPS）。在第5章中，成长的条件。研究了使用电化学原子层外延在Au（111）表面上形成的稳定的硫化汞（HgS）单层。 HgS薄膜通过X射线光电子能谱（XPS）和扫描隧道显微镜（STM）表征。第6章：本章介绍了使用共振拉曼光谱来表征在金属表面上电合成的II-VI化合物半导体的薄膜。我们描述共振拉曼实验如何提供信息。关于材料的电子能带结构以及与时间有关的现象，例如电荷载流子的俘获。在第7章中，研究了利用电化学原子层外延电合成高质量的热电材料薄膜。具体地，研究了使用顺序的Sb和Co的欠电位沉积循环来在Au衬底上产生CoSb相。

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