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Ion implantation damage in silicon dioxide studied with positron annihilation spectroscopy.

机译：用正电子an没光谱研究了二氧化硅中的离子注入损伤。

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hermally grown SiO;In insulating materials such as SiO;Analysis of the measured defect profiles, and comparison with TRIM Monte Carlo simulations, allows us to deduce the relative contributions of the nuclear and electronic stopping to the radiation damage, which was nearly constant as a function of depth. It was found that 22% of the predicted vacancies remained after the recombination of defects and that the energy necessary to produce defects by ionization was

机译：热增长的SiO;在SiO等绝缘材料中;对测得的缺陷轮廓的分析以及与TRIM蒙特卡洛模拟的比较，使我们可以推断出核和电子停止对辐射损伤的相对贡献，该常数几乎恒定深度功能。发现缺陷重组后仍保留了22％的预计空位，并且通过电离产生缺陷所需的能量为

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作者
Spooner, Marc.;
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作者单位

The University of Western Ontario (Canada).;

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授予单位 The University of Western Ontario (Canada).;
学科 Physics Radiation.
学位 M.Sc.
年度 1998
页码 51 p.
总页数 51
原文格式 PDF
正文语种 eng
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专利

1. VACANCY CLUSTER DISTRIBUTIONS IN He IMPLANTED SILICON STUDIED BY SLOW POSITRON ANNIHILATION SPECTROSCOPY [J] . R.S. Brusa Acta Physica Polonica. A . 1999,第4期

机译：慢正电子AN没光谱研究他植入的硅中空位簇的分布
2. Degradation of Polymer Coating Systems Studied by Positron Annihilation Spectroscopy. II. Correlation with Free Radical Formation [J] . H. Cao, Y. he, R. Zhang, Journal of Polymer Science, Part B. Polymer Physics . 1999,第12期

机译：正电子ni没光谱研究聚合物涂层体系的降解。二。与自由基形成的相关性
3. Degradation of polymer coating systems studied by positron annihilation spectroscopy. IV. Oxygen effect of UV irradiation [J] . R.Zhang, H.Chen, H.Cao, Journal of Polymer Science, Part B. Polymer Physics . 2001,第17期

机译：通过正电子an没光谱研究的聚合物涂层系统的降解。 IV。紫外线辐射的氧效应
4. Vacancy-Type Defect Distributions of ~(11)B-, ~(14)N- and ~(27)Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy [C] . M.S. Janson, J. Slotte, A.Yu. Kuznetsov, 4th European Conference on Silicon Carbide and Related Materials (ECSCRM 2002); Sep 2-5, 2002; Linkoeping, Sweden . 2002

机译：正电子ni没光谱法研究〜（11）B-，〜（14）N-和〜（27）Al注入的4H-SiC空位型缺陷分布
5. Free volume properties of drug delivery polymers studied by positron annihilation spectroscopy. [D] . Li, Ying. 2004

机译：通过正电子an没光谱研究了药物递送聚合物的自由体积特性。
6. Gradient Microstructure Induced by Surface Mechanical Attrition Treatment (SMAT) in Magnesium Studied Using Positron Annihilation Spectroscopy and Complementary Methods [O] . Konrad Skowron, Ewa Dryzek, Mirosław Wróbel, 2020

机译：用正电子湮没光谱和互补方法研究了表面机械磨损处理（SMAT）引起的梯度微观结构
7. The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy [O] . Coleman Paul G, Nash Deborah, Edwardson Charlene J, 2011

机译：用正电子an没光谱研究绝缘体上硅结构中空位型缺陷的演变
8. Thermal Annealing of Radiation Damage in Nacl Crystals Studied by Positron Annihilation Techniques [R] . Nicholas, J. B., Tumosa, C. S., Ache, H. J. 1972

机译：正电子湮没技术研究Nacl晶体辐射损伤的热退火

Ion implantation damage in silicon dioxide studied with positron annihilation spectroscopy.

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