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Advanced algorithmic techniques for cellular Monte Carlo simulation.

机译：蜂窝蒙特卡洛模拟的先进算法技术。

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摘要

The general trend in the electronics industry to increase the density of integrated circuits leads to the reduction of the size of Si transistors to their fundamental limit. Innovative device structures and new materials must then be explored to continue the fast progress of information technology and telecommunications. Intensive research is now concentrated on strained materials and heterostructure devices which cannot be accurately analyzed with traditional drift-diffusion or hydrodynamic simulators. This work generalizes a full-band particle-based simulation tool to handle these new crystal structures and devices. This goal was achieved by considering the most important aspects for this work: the full band structure as calculated by the Empirical Pseudopotential Method (EPM) including non-local and spin-orbit interactions, generalized to any given lattice, the full phonon dispersion calculated via three different models to allow the compatibility with the data available in the literature, and the different scattering mechanisms which regulate the dynamics of charge carriers within a material. A particular effort was made to optimize the implementation of the phonon-electron scattering mechanism based on the computationally demanding rigid pseudo-ion model, and a reduction by a factor of 30 of the time required to compute the scattering tables was achieved by interpolating the states of the carriers. A quantum correction based on an effective potential was also investigated and applied in the simulation of a 85 nm AlInSb/InSb Quantum Well transistor, resulting in a Drain Barrier Induced Lowering (DIBL) of 693 mV/V, and a sub-threshold slope of 427 mV/dec. The characterization of the dynamic behavior of new device structures was then performed, yielding the extraction of important figures of merit, such as the cutoff frequency and the frequency-dependent current gain. The step function, the sinc pulse, and the monochromatic sinusoidal function were investigated and compared as three different excitation waveforms, showing good agreement with one another.
机译：电子工业中增加集成电路密度的大趋势导致将Si晶体管的尺寸减小到其基本极限。然后必须探索创新的设备结构和新材料，以继续信息技术和电信的快速发展。现在，集中的研究集中在应变材料和异质结构设备上，而传统的漂移扩散或流体动力学模拟器无法对其进行精确分析。这项工作概括了基于全频带粒子的仿真工具，以处理这些新的晶体结构和器件。通过考虑这项工作的最重要方面，实现了这一目标：通过经验伪电势方法（EPM）计算的全能带结构，包括非局部和自旋轨道相互作用，并推广到任何给定晶格；通过三种不同的模型以允许与文献中的数据兼容，以及调节材料中电荷载流子动力学的不同散射机制。做出了特别的努力，基于对计算有严格要求的刚性伪离子模型，优化了声子-电子散射机制的实现，并且通过对状态进行插值，将计算散射表所需的时间减少了30倍的载体。还研究了基于有效电势的量子校正，并将其应用于85 nm AlInSb / InSb量子阱晶体管的仿真中，导致漏极势垒引起的下降（DIBL）为693 mV / V，亚阈值斜率为427 mV / dec。然后对新器件结构的动态行为进行了表征，得出了重要的品质因数，例如截止频率和与频率相关的电流增益。研究了阶跃函数，正弦脉冲和单色正弦函数，并将其作为三种不同的激励波形进行了比较，显示出很好的一致性。

著录项

  • 作者

    Faralli, Nicolas.;

  • 作者单位

    Arizona State University.;

  • 授予单位 Arizona State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 119 p.
  • 总页数 119
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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