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Design and fabrication of Schottky barrier diodes on SiC.

机译：SiC上的肖特基势垒二极管的设计与制造。

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摘要

Schottky diodes with blocking voltages in excess of 1 kV have been demonstrated on 4H-and 6H-SiC. The metal field plate structure has been utilized for reducing electric field crowding at the periphery of the diodes. These diodes have been shown to have a lower on-resistance (4.4 m{dollar}Omega{dollar}Z-cm{dollar}sp2{dollar}) than conventional Si p-i-n or Schottky diodes of similar breakdown voltage ratings due to the thinner and more heavily-doped drift layer. It is possible to have such thinner and more heavily doped drift layer in SiC (compared to Si) for similar breakdown voltage ratings by virtue of the high breakdown electric field ({dollar}sim{dollar}10x compared to Si) of SiC. The lower on-resistance of the diodes in turn results in lower forward voltage drop at high operating current densities (e.g. 1.6-1.8 V at 100 A/cm{dollar}sp2{dollar}). In addition, the refractive metals such as Ni and Pt utilized for Schottky contacts to SiC in this study have resulted in large barrier heights ({dollar}>{dollar}1.1 eV). The large barrier height reduces the leakage currents in the Schottky diodes (less than 10{dollar}sp{lcub}-2{rcub}{dollar} A/cm{dollar}sp2{dollar} at {dollar}-{dollar}1000 V for Ni/4H-SiC diodes). Current ON/OFF ratios (ratio of the forward current density at 2 V to the reverse current density at {dollar}-{dollar}500 V) in excess of 10{dollar}sp7{dollar} has been obtained for Ni/4H-SiC diodes at room temperature. The diodes have been found to retain excellent rectifying behavior at high temperatures, with only a slight degradation in the ON/OFF ratios resulting from the increase in leakage currents. ON/OFF:ratios in excess of 10{dollar}sp6{dollar} have been measured up to temperatures of 300{dollar}spcirc{dollar}C. The effect of area of circular Ni/4H-SiC diodes on the resulting current-voltage characteristics has been studied and leakage currents have been measured as a function of the diode Area-to-Perimeter ratio. A strong decreasing effect in the leakage current density has been observed for the diodes as the diode diameter is increased from 30{dollar}mu{dollar}m to 200{dollar}mu{dollar}m. The rectifier efficiency (rectification ratio) of the diodes has been studied at varying frequencies of the applied a.c. voltage and at high temperatures up to 300{dollar}spcirc{dollar}C. A rectification ratio close to the ideal expected value has been observed for frequencies up to 600 kHz and temperatures up to 300{dollar}spcirc{dollar}C. These results of the study show that high voltage Schottky diodes on SiC diodes have good prospects for several high power applications.
机译：在4H-和6H-SiC上已经证明了截止电压超过1 kV的肖特基二极管。金属场板结构已被用于减少在二极管外围的电场拥挤。这些二极管的导通电阻（4.4mΩ·Ω·Z-cm {dollar} sp2·dollar）比具有类似击穿电压等级的传统Si引脚或肖特基二极管的导通电阻（4.4mΩ·Ω·Ω·Ω·cm）要低。更重掺杂的漂移层。由于SiC的高击穿电场（与Si相比，Si较之Si），在相似的击穿电压额定值下，可以具有更薄，更重的掺杂漂移层（与Si相比）。二极管的较低的导通电阻进而导致在较高的工作电流密度下（例如，在100 A / cm 2时为1.6-1.8 V）。另外，在这项研究中，用于肖特基与SiC接触的Ni和Pt等折射金属导致了较大的势垒高度（{dollar}> {dollar} 1.1 eV）。大的势垒高度降低了肖特基二极管中的泄漏电流（小于10 {dollar} sp {lcub} -2 {rcub} {dollar} A / cm {dollar} sp2 {dollar}为{dollar}-{dollar} 1000 Ni / 4H-SiC二极管的V）。对于Ni / 4H-，已获得超过10 {dol} sp7 {dol}的电流开/关比（2 V时的正向电流密度与{dollar}-{dollar} 500 V时的反向电流密度之比）室温下的SiC二极管。已经发现，二极管在高温下仍保持出色的整流性能，而由于漏电流的增加，导通/截止比仅略有下降。开/关：测量的比值超过10 {dol}} sp6 {dol}，最高温度为300 {dol} spcirc {dol}。研究了圆形Ni / 4H-SiC二极管的面积对所得电流-电压特性的影响，并测量了泄漏电流与二极管面积/周长比的关系。随着二极管直径从3030μm增加到200 {μm，已经观察到二极管的漏电流密度的强烈减小效果。已经研究了在施加的交流电的不同频率下二极管的整流器效率（整流比）。电压和高温下最高300 {sp} {dol} C。对于高达600 kHz的频率和高达300℃的温度，已经观察到接近理想期望值的整流比。这些研究结果表明，SiC二极管上的高压肖特基二极管在几种高功率应用中具有良好的前景。

著录项

  • 作者

    Saxena, Vivek.;

  • 作者单位

    University of Cincinnati.;

  • 授予单位 University of Cincinnati.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1998
  • 页码 160 p.
  • 总页数 160
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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