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首页> 外文学位 >XPS study of silicon oxycarbide formation on SiC surfaces at ambient temperatures.
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XPS study of silicon oxycarbide formation on SiC surfaces at ambient temperatures.

机译：在环境温度下在SiC表面上形成碳氧化硅的XPS研究。

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摘要

The Si 2p binding energies for various silicon oxycarbides species have been established using X-ray Photoelectron Spectroscopy (XPS) analysis of single phase compounds and multicomponent silicon oxycarbide glasses. A simplified Pauling charge model was used to interpret the measured binding energies in terms of the local bonding environment of the silicon; this model successfully described the data obtained in this study as well as the data reported in previous studies of silicon oxycarbides. The oxygen and carbon concentrations required to satisfy the distribution of Si 2p components measured in silicon oxycarbide glass samples were compared to the concentrations calculated independently using the Si, O and C photoelectron intensities.; The established binding energies were used to identify the species formed during the initial oxidation of SiC surfaces. Amorphous SiC as well as the two polar faces of single-crystal {dollar}alpha{dollar}-SiC (C-face and Si-face) were exposed to various oxygen sources at room temperature. The oxygen sources included the residual gas in a UHV environment, ambient air, ozone and oxygen plasma, all of which are typical oxidizing environments encountered during fabrication of microelectronic devices. In general, the relative rate and extent of oxidation of the various SiC materials obeyed the following relation: Si-face {dollar}<{dollar} C-face {dollar}<{dollar} amorphous SiC. However, no significant oxygen uptake was detected after exposure of the C-face SiC to air. XPS was used to follow changes in the surface composition and to determine the local bonding environment of the Si-atoms. It was found that silicon oxycarbide species are formed when these SiC materials are initially exposed to oxygen. With extended exposure of amorphous SiC to ambient air, a SiO{dollar}sb2{dollar} layer is subsequently formed over the silicon oxycarbide. However, the native oxide on the single-crystal Si-face SiC consists mainly of silicon oxycarbide species. After exposures to more active oxygen (i.e., O{dollar}sb3{dollar} and oxygen plasma) SiO{dollar}sb2{dollar} was observed on all samples and silicon oxycarbide species were detected at the interface. The extent of oxidation was found to be related to the thickness of the silicon oxycarbide layer. A model is proposed to explain the observed differences in oxidation behaviors for the investigated SiC materials.
机译：使用单相化合物和多组分碳氧化硅玻璃的X射线光电子能谱（XPS）分析，已经确定了各种碳氧化硅物种的Si 2p结合能。简化的鲍林电荷模型用于根据硅的局部键合环境解释测得的结合能。该模型成功地描述了该研究中获得的数据以及碳氧化硅的先前研究中报告的数据。将满足在碳氧化硅玻璃样品中测得的满足Si 2p成分分布所需的氧和碳浓度与使用Si，O和C光电子强度独立计算的浓度进行比较。建立的结合能用于鉴定在SiC表面初始氧化过程中形成的物质。在室温下，非晶SiC以及单晶{alpha}α{dollar} -SiC的两个极性面（C面和Si面）都暴露于各种氧源。氧气源包括特高压环境中的残留气体，环境空气，臭氧和氧气等离子体，所有这些都是微电子器件制造过程中遇到的典型氧化环境。通常，各种SiC材料的相对氧化速率和氧化程度遵循以下关系：Si面{美元} <{美元} C面{美元} <{美元}非晶SiC。但是，在将C面SiC暴露于空气后，未检测到明显的氧气吸收。 XPS用于跟踪表面成分的变化并确定Si原子的局部键合环境。已经发现，当这些SiC材料最初暴露于氧气时会形成碳氧化硅物质。随着无定形SiC长时间暴露于环境空气中，随后在碳氧化硅上方形成了SiO {dollar} sb2 {dollar}层。但是，单晶硅面SiC上的自然氧化物主要由碳氧化硅组成。暴露于更多活性氧（即O {dolb} sb3 {dollar}和氧等离子体）之后，在所有样品上均观察到SiO {dollar} sb2 {dollar}，并且在界面处检测到碳氧化硅物质。发现氧化程度与碳氧化硅层的厚度有关。提出了一个模型来解释所研究的SiC材料在氧化行为上观察到的差异。

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  • 作者

    Onneby, Anna Carina.;

  • 作者单位

    The Pennsylvania State University.;

  • 授予单位 The Pennsylvania State University.;
  • 学科 Engineering Materials Science.; Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 199 p.
  • 总页数 199
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;无线电电子学、电信技术;
  • 关键词

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