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Properties and applications of doped Ge thermistors.

机译：掺杂锗热敏电阻的特性和应用。

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摘要

In the first half of this thesis, we discuss the importance of doped semiconductors for studies of disordered systems and review impurity conduction in the Ohmic limit. We then review the previous theoretical and experimental studies of non-Ohmic impurity conduction and discuss many contradictions between the existing studies. In particular, the dependence of the non-Ohmic conductivity on impurity concentration and temperature has not been established.;We describe three experimental studies of non-Ohmic impurity conduction in neutron transmutation doped germanium samples which have an extremely homogeneous, random impurity distribution. We find several new phenomena including a universal curve which describes the non-Ohmic behavior of lightly doped Ge:Ga samples, and a dramatic change in the non-Ohmic conductivity as the impurity concentration nears the critical concentration for a metal-insulator transition. We include a qualitative discussion of the effects of stress.;The second half of this thesis is concerned with various applications of doped Ge semiconductors. We present numerical methods for the global optimization of bolometric infrared detectors which use current-biased semiconducting thermistors. We explicitly include both the electric field dependence of the thermistor resistance and amplifier noise.;We present data from a novel low temperature particle detector which uses doped Ge thermistors as calorimeters. This detector uses a quasiparticle trapping mechanism to funnel athermal phonon energy from a large Ge absorber into a small doped Ge thermistor via a superconducting Al film.;We conclude with a description of an experiment which uses a doped Ge thermistor as part of a conventional low temperature bolometer for far infrared studies of the novel materials Sc;In the appendix we present measurements of the NJ132L JFET voltage noise as a function of temperature, drain voltage, and current. We discuss the fabrication of small, cooled JFET packages which can bolt to a helium cold plate and self-heat to a selected operating temperature, and we present an ultra-low noise voltage preamplifier design for room temperature operation.
机译：在本文的上半部分，我们讨论了掺杂半导体在无序系统研究中的重要性，并回顾了欧姆极限中的杂质传导。然后，我们回顾了以前非欧姆杂质传导的理论和实验研究，并讨论了现有研究之间的许多矛盾。特别是，还没有建立非欧姆电导率对杂质浓度和温度的依赖性。我们描述了三项中子trans杂掺杂锗样品中非欧姆电导率的实验研究，这些样品具有非常均匀，随机的杂质分布。我们发现了几种新现象，包括描述轻掺杂Ge：Ga样品的非欧姆行为的通用曲线，以及当杂质浓度接近金属-绝缘体转变的临界浓度时，非欧姆电导率的急剧变化。我们对应力的影响进行了定性讨论。本文的后半部分涉及掺杂锗半导体的各种应用。我们为使用电流偏置的半导体热敏电阻的辐射热红外探测器的全局优化提供了数值方法。我们明确地包括了热敏电阻电阻和放大器噪声的电场依赖性。我们提供了来自新型低温粒子探测器的数据，该探测器使用掺杂的Ge热敏电阻作为量热仪。该探测器使用准粒子捕获机制，通过超导Al膜将大的Ge吸收体中的非热声子能量通过超导Al膜漏入小的掺杂的Ge热敏电阻中。我们对使用掺杂的Ge热敏电阻作为常规低热电偶的一部分的实验进行了描述。温度辐射热计，用于新型材料Sc的远红外研究；在附录中，我们介绍了NJ132L JFET电压噪声随温度，漏极电压和电流变化的测量结果。我们讨论了小型，冷却的JFET封装的制造，该封装可以用螺栓固定在氦冷板上并自热至选定的工作温度，并且我们提出了一种适用于室温工作的超低噪声电压前置放大器设计。

著录项

  • 作者

    Grannan, Sabrina Marie.;

  • 作者单位

    University of California, Berkeley.;

  • 授予单位 University of California, Berkeley.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 1996
  • 页码 197 p.
  • 总页数 197
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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