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Optical interferometric measurement of in-plane residual stresses in silicon dioxide films on silicon substrates.

机译：光学干涉测量法在硅基板上的二氧化硅膜中的平面内残余应力。

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摘要

Shadow moire interferometry was used to measure the in-plane stress distribution in silicon dioxide radio frequency (R.F.) sputtered films deposited on 100 mm diameter (100) p-type silicon wafers. Spatial resolution, material anisotropy, interpolation techniques, film thickness, film density, primary and secondary causes of stress were investigated in this thesis. A model relating the film stresses to thermal lattice mismatch between the film and the substrate suggests that the film-substrate system can experience temperatures of 500C during room temperature R.F. sputtering. Anisotropy modifies the results by only {dollar}pm{dollar}3%. Nanoindentation was used to determine the modulus of the thin films. Ellipsometry was used to determine the as-sputtered oxide film thickness and density across the wafer. Optical laser scanning was used to obtain bow of the wafers. The films were found to have an insignificant effect on the residual stresses within the Si substrate.; The spatial variation of the stresses was determined as a function of position on the wafers. Stresses range from 0 to {dollar}-{dollar}30 GPa and are a strong function of thickness. The spatial variation and average value of the stresses decrease with increasing film thickness. Film stress maps of the entire wafer show many regions of high stress around the edges. Film stresses are more uniform in the center region than close to the edges. The results of the 30 wafers tested show that not only the average stress but also the stress gradients, maximum, and minimum values of stresses should be considered in the evaluation of oxide film stresses.
机译：阴影莫尔干涉仪用于测量沉积在直径为100毫米（100）p型硅晶片上的二氧化硅射频（R.F.）溅射膜中的面内应力分布。本文研究了空间分辨率，材料各向异性，插值技术，膜厚，膜密度，应力的主要和次要原因。将膜应力与膜和基底之间的热晶格失配相关的模型表明，膜-基底系统在室温R.F时可经历500°C的温度。溅射。各向异性仅使{dollar} pm {dollar} 3％修改结果。纳米压痕用于确定薄膜的模量。椭偏法用于确定整个晶片上的溅射态氧化膜厚度和密度。使用光学激光扫描来获得晶片的弓形。发现该膜对Si衬底内的残余应力影响不大。应力的空间变化被确定为晶片上位置的函数。应力范围从0到{dollar}-{dollar} 30 GPa，并且是厚度的强大函数。应力的空间变化和平均值随膜厚度的增加而减小。整个晶圆的薄膜应力图显示了许多高应力区域围绕着边缘。薄膜应力在中心区域比靠近边缘更均匀。测试的30个晶片的结果表明，在评估氧化膜应力时，不仅应考虑平均应力，还应考虑应力梯度，最大和最小值。

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  • 作者

    Ghaffari, Kasra.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Materials Science.; Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 1995
  • 页码 96 p.
  • 总页数 96
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;机械、仪表工业;
  • 关键词

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